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NTE - MOSFET N-Ch / Enhancement Mode High Speed Switch

Numéro de référence NTE2389
Description MOSFET N-Ch / Enhancement Mode High Speed Switch
Fabricant NTE 
Logo NTE 





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NTE2389 fiche technique
NTE2389
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Drain–Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152A
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2°C/W
Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Static Ratings
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate–Source Leakage Current
Drain–Source On–State Resistance
Dynamic Ratings
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
ID = 0.25mA, VGS = 0
ID = 1mA, VDS = VGS
VDS = 60V,
VGS = 0
TJ = +25°C
TJ = +125°C
VGS = ±30V, VDS = 0
ID = 20A, VGS = 10V
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
gfs
Ciss
Coss
Crss
ID = 20A, VDS = 25V
VDS = 25V, VGS = 0, f = 1MHz
Min Typ Max Unit
60 – – V
2.1 3.0 4.0 V
– 1 10 µA
– 0.1 1.0 mA
– 10 100 nA
– 40 45 m
8 13.5 – mhos
– 1650 2000 pF
– 560 750 pF
– 300 400 pF

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