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NTE2387 fiches techniques PDF

NTE - MOSFET N-Channel Enhancement Mode / High Speed Switch

Numéro de référence NTE2387
Description MOSFET N-Channel Enhancement Mode / High Speed Switch
Fabricant NTE 
Logo NTE 





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NTE2387 fiche technique
NTE2387
MOSFET
N–Channel Enhancement Mode,
High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Drain–Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Pulsed Drain Current, IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Continuous Drain Current, ID
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Total Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static Characteristics
Drain–Source Breakdown Voltage V(BR)DSS ID = 250µA, VGS = 0
800 –
–V
Zero–Gate Voltage Drain Current
IDSS VGS = 0, VDS = 800V, TC = +25°C
2 20 µA
VGS = 0, VDS = 800V, TC = +125°C –
0.1 1.0 mA
Gate–Body Leakage Current
IGSS VDS = 0, VGS = ±30V
– 10 100 nA
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 1mA
2.1 3.0 4.0 V
Static Drain–Source On Resistance RDS(on) VGS = 10V, ID = 1.5A
– 2.7 3.0
Dynamic Characteristics
Forward Transconductance
Input Capactiance
Output Capacitance
Reverse Transfer Capactiance
Turn–On Time
Rise Time
Turn–Off Delay Time
Fall Time
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS = 25V, ID = 1.5A
VDS = 25V, VGS = 0, f = 1MHz
VDD = 30V, ID = 2.3A, VGS = 10V,
RGS = 50, Rgen = 50
3.0 4.3 – mho
– 1000 1250 pf
– 80 120 pf
– 30 50 pf
– 10 25 ns
– 25 40 ns
– 130 150 ns
– 40 60 ns

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