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NTE2383 fiches techniques PDF

NTE - MOSFET P-Channel Enhancement Mode / High Speed Switch (Compl to NTE2382)

Numéro de référence NTE2383
Description MOSFET P-Channel Enhancement Mode / High Speed Switch (Compl to NTE2382)
Fabricant NTE 
Logo NTE 





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NTE2383 fiche technique
NTE2383
MOSFET
P–Channel Enhancement Mode,
High Speed Switch
(Compl to NTE2382)
Description:
The NTE2383 is a MOS power P–Channel FET in a TO220 type package designed for high voltage,
high speed power switching applications such as switching regulators, converters, solenoid, and relay
drivers.
Features:
D Lower RDS(ON)
D Improved Inductive Ruggedness
D Fast Switching Times
D Rugged Polysilicon Gate Cell Structure
D Lower Input Capacitance
D Extended Safe Operating Area
D Improved High Temperature Reliability
Absolute Maximim Ratings:
Drain–Source Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Drain–Gate Voltage (RGS = 1M, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Continuous Drain Current, ID
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.5A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A
Drain Current, Pulsed (Note 3), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42A
Gate Current, Pulsed, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A
Single Pulsed Avalanvhe Energy (Note 4), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 510mJ
Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.5A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6W/°C
Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67°C/W
Thermal Resistance, Case–to–Sink (Note 5), RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5°C/W
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +300°C
Note 1. TJ = +25° to +150°C
Note 2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Note 3. Repetitive rating: Pulse width limited by max. junction temperature.
Note 4. L = 8.5mH, VDD = 25V, RG = 25, Starting TJ = +25°C.
Note 5. Mounting surface flat, smooth, and greased.

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