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Numéro de référence | NTE2348 | ||
Description | Silicon NPN Transistor High Voltage / High Speed Switch | ||
Fabricant | NTE | ||
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1 Page
NTE2348
Silicon NPN Transistor
High Voltage, High Speed Switch
Features:
D High Breakdown Voltage, High Reliability
D Fast Switching Speed
D Wide Safe Operating Area
Absolute Maximum ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
ICBO
IEBO
hFE (1)
hFE (2)
fT
Cob
VCE(sat)
VBE(sat)
VCB = 800V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 800mA
VCE = 5V, IC = 4A
VCE = 10V, IC 800mA
VCB = 10V, f = 1MHz
IC = 6A, IB = 1.2mA
IC = 6A, IB = 1.2mA
Min Typ Max Unit
– – 10 µA
– – 10 µA
10 – –
8––
– 15 – MHz
– 215 – pF
– – 2.0 V
– – 1.5 V
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Pages | Pages 2 | ||
Télécharger | [ NTE2348 ] |
No | Description détaillée | Fabricant |
NTE234 | Silicon PNP Transistor Low Noise / High Gain Amplifier | NTE |
NTE2340 | Silicon NPN Transistor Darlington Power Amp / Switch | NTE |
NTE2341 | Silicon Complementary Transistors Darlington Driver | NTE |
NTE2342 | Silicon Complementary Transistors | NTE |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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