|
|
Numéro de référence | NTE2337 | ||
Description | Silicon NPN Transistor High Speed Switch | ||
Fabricant | NTE | ||
Logo | |||
1 Page
NTE2337
Silicon NPN Transistor
High Speed Switch
Features:
D High Collector–Base Voltage (VCBO)
D Wide Area of Safety Operation (ASO)
D Good Linearity of DC Current Gain (hFE)
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Collector Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
Peak Collector Current, ICP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Power Dissipation, PC
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
ICBO VCB = 900V, IE = 0
– – 100 µA
Emitter Cutoff Current
IEBO VEB = 5V, IC = 0
– 100 µA
Collector Emitter Voltage
VCEO IC = 10mA, IB = 0
500 – – V
DC Current Gain
hFE1 VCE = 5V, IC = 0.1A
15 – –
hFE2 VCE = 5V, IC = 4A
8––
Collector–Emitter Saturation Voltage VCE(sat) IC = 4A, IB = 0.8A
– – 1.0 V
Base–Emitter Saturation Voltage VBE(sat) IC = 4A, IB = 0.8A
– – 1.5 V
Transition Frequency
fT VCE = 10V, IC = 0.5A, f = 1MHz – 20 – MHz
Turn–On Time
Storage Time
Collector Current Fall Time
ton IC = 4A,
tstg
IB1 = 0.8A, IB2 = –1.6A,
VCC = 200V
tf
– – 1.0 µs
– – 3.0 µs
– – 0.3 µs
|
|||
Pages | Pages 2 | ||
Télécharger | [ NTE2337 ] |
No | Description détaillée | Fabricant |
NTE233 | Silicon NPN Transistor Video IF / Oscillator | NTE |
NTE2330 | Silicon NPN Transistor High Gain Amp w/Internal Zener Diode | NTE |
NTE2331 | Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode | NTE |
NTE2332 | Darlington Silicon NPN Transistor w/ Internal Damper & Zener Diode | NTE |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |