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NTE - Silicon NPN Transistor Darlington Switch w/Internal Damper & Zener Diode

Numéro de référence NTE2336
Description Silicon NPN Transistor Darlington Switch w/Internal Damper & Zener Diode
Fabricant NTE 
Logo NTE 





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NTE2336 fiche technique
NTE2336
Silicon NPN Transistor
Darlington Switch w/Internal Damper
& Zener Diode
Features:
D 60V Zener Diode Built–In Between Collector and Base
D Low Fluctuation in Breakdown Voltages
D High Energy Handling Capability
D High Speed Switching
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W
Collector Power Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Voltage
ICBO
IEBO
VCEO
VCB = 50V, IE = 0
VEB = 7V, IC = 0
IC = 5mA, IB = 0
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
hFE
VCE(sat)
VBE(sat)
VCE = 3V, IC = 4A
VCE = 3V, IC = 8A
IC = 4A, IB = 8mA
IC = 4A, IB = 8mA
Transition Frequency
fT VCE = 10V, IC = 500mA, f = 1MHz
Min Typ Max Unit
– – 100 µA
– – 2 mA
50 – 70 V
2000 – 5000
500 –
– – 1.5 V
– – 2.0 V
– 20 – MHz

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