NTE233 Datasheet PDF - NTE
| Part Number | NTE233 | |
| Description | Silicon NPN Transistor Video IF / Oscillator | |
| Manufacturers | NTE | |
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NTE233
Silicon NPN Transistor
Video IF, Oscillator
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec), TL . . . . . . . . . . . . . . . +230°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0
30 – – V
Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0
3–– V
Collector Cutoff Current
ICBO VCB = 30V, IE = 0
– – 50 nA
ICEO VCE = 30V, IB = 0
– – 1 µA
DC Pulse Current Gain
hFE IC = 10mA, VCE = 10V, Note 1 20 – 100
Collector Saturation Voltage
VCE(sat) IC = 20mA, IB = 0.1mA, Note 1 – 0.6 –
V
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 1mA, IB = 0, Note 1
30 – – V
Current Gain–Bandwidth Product
fT IC = 10mA, VCE = 10V,
f = 100MHz
300 – 700 MHz
Power Gain, Fixed Neutralization
Gpe IC = 10mA, VCE = 10V,
f = 45MHz
25 – – dB
Reverse Transfer Capacitance
Output Admittance, Input Short
Circuit
Cre IE = 0, VCB = 10V, f ≤ 1MHz
goe IC = 10mA, VCE = 10V,
f = 45MHz
0.6 – 1.1 pF
30 – 200 µmho
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1%.
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for NTE233 electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ NTE233.PDF Datasheet ] | |
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