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Numéro de référence | NTE2328 | ||
Description | cSilicon Complementary Transistors Audio Power Output | ||
Fabricant | NTE | ||
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1 Page
NTE2328 (NPN) & NTE2329 (PNP)
Silicon Complementary Transistors
Audio Power Output
Features:
D Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Breakdown Voltage
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Voltage
Transistion Frequency
Collector Output Capacitance
ICBO VCB = 200V, IE = 0
IEBO VBE = 5V, IC = 0
V(BR)CEO IC = 50mA, IB = 0
hFE1 VCE = 5V, IC = 1A
hFE2 VCE = 5V, IC = 8A
VCE(sat) IC = 10A, IB = 1A
VBE VCE = 5V, IC = 8A
fT VCE = 5V, IC = 1A
Cob VCB = 10V, IE = 0, f = 1MHz
Min Typ Max Unit
– – 5.0 µA
– – 5.0 µA
200 – – V
55 – 160
35 60 –
– 1.5 3.0 V
– 1.0 1.5 V
– 25 – MHz
– 470 – pF
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Pages | Pages 2 | ||
Télécharger | [ NTE2328 ] |
No | Description détaillée | Fabricant |
NTE232 | Silicon PNP Transistor Darlington Amplifier / Preamp | NTE |
NTE2320 | Silicon NPN/PNP Transistor Quad / General Purpose Switch / Amp (Complementary Pair) | NTE |
NTE2321 | Silicon NPN Transistor Quad / General Purpose | NTE |
NTE2322 | Silicon PNP Transistor Quad / General Purpose | NTE |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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