DataSheetWiki


NTE2322 fiches techniques PDF

NTE - Silicon PNP Transistor Quad / General Purpose

Numéro de référence NTE2322
Description Silicon PNP Transistor Quad / General Purpose
Fabricant NTE 
Logo NTE 





1 Page

No Preview Available !





NTE2322 fiche technique
NTE2322
Silicon PNP Transistor
Quad, General Purpose
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Device Dissipation (TA = +25°C, Each Transistor), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/°C
Total Device Dissipation (TA = +25°C, Total Device), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.9W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Thermal Reistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 1)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
IC = 10mA, IB = 0, Note 1
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCB = 30V, IE = 0
VEB = 3V, IE = 0
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
hFE
VCE(sat)
VBE(sat)
VCE = 10V, IC = 10mA
VCE = 10V, IC = 150mA
VCE = 10V, IC = 300mA
IC = 150mA, IB = 15mA
IC = 300mA, IB = 30mA
IC = 150mA, IB = 15mA
IC = 300mA, IB = 30mA
Note 1. Pulse test: Pulse Width 300µs, Duty Cycle 2%.
Min Typ Max Unit
40 – – V
60 – – V
5–– V
– – 50 nA
– – 50 nA
75 – –
100 – –
30 – –
– – 0.4 V
– – 1.6 V
– – 1.5 V
– – 2.6 V

PagesPages 2
Télécharger [ NTE2322 ]


Fiche technique recommandé

No Description détaillée Fabricant
NTE232 Silicon PNP Transistor Darlington Amplifier / Preamp NTE
NTE
NTE2320 Silicon NPN/PNP Transistor Quad / General Purpose Switch / Amp (Complementary Pair) NTE
NTE
NTE2321 Silicon NPN Transistor Quad / General Purpose NTE
NTE
NTE2322 Silicon PNP Transistor Quad / General Purpose NTE
NTE

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche