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PDF NTE222 Data sheet ( Hoja de datos )
| Número de pieza | NTE222 | |
| Descripción | Field Effect Transistor Dual Gate N-Channel MOSFET | |
| Fabricantes | NTE | |
| Logotipo |  |
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NTE222
Field Effect Transistor
Dual Gate N–Channel MOSFET
Absolute Maximum Ratings:
Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Reverse Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10mA
Forward Gate Current, IGF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Lead Temperature (During Soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Drain–Source Breakdown Voltage V(BR)DSX ID = 10µA, VG1 = VG2 = –5V
25 –
–
V
Gate 1–Source Breakdown Voltage V(BR)G1SO IG1 = ±10mA, Note 1
±6 – ±30 V
Gate 2–Source Breakdown Voltage V(BR)G2SO IG2 = ±10mA, Note 1
±6 – ±30 V
Gate 1 Leakage Current
IG1SS VG1S = ±5V, VG2S = VDS = 0
– – ±10 nA
Gate 2 Leakage Current
IG2SS VG2S = ±5V, VG1S = VDS = 0
– – ±10 nA
Gate 1 to Source Cutoff Voltage
VG1S(off) VDS = 15V, VG2S = 4V, ID = 20µA –0.5 – –4.0
V
Gate 2 to Source Cutoff Voltage
VG2S(off) VDS = 15V, VG1S = 0V, ID = 20µA –0.2 – –4.0
V
ON Characteristics (Note 2)
Zero–Gate–Voltage Drain Current
Small–Signal Characteristics
IDSS VDS = 15V, VG2S = 4V, VG1S = 0V 6
– 30 mA
Forward Transfer Admittance
|Yfs| VDS = 15V, VG2S = 4V, VG1S = 0V, 10 – 22 mmhos
f = 1kHz, Note 3
Note 1. All gated breakdown voltages are measured while the device is conducting rated gate cur-
rent. This insures that the gate voltage limiting network is functioning properly.
Note 2. Pulse Test: Pulse Width = 30µs, Duty Cycle ≤ 2%.
Note 3. This parameter must be measured with bias voltages applied for less than five (5) seconds
to avoid overheating.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE222.PDF ] | |
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