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Numéro de référence | NTE221 | ||
Description | MOSFET Dual Gate / N-Channel for VHF TV Receivers Applications | ||
Fabricant | NTE | ||
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1 Page
NTE221
MOSFET
Dual Gate, N–Channel for
VHF TV Receivers Applications
Description:
The NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes
MOS construction. This device has characteristics which makes it highly desirable for use in RF–am-
plifier applications.
Features:
D Extremely Low Feedback Capacitance
D High Power Gain
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain–to–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +20V
Gate 1–to–Source Voltage, VG1S
Continuous (DC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1V to –8V
Peak AC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V to –8V
Gate 2–to–Source Voltage, VG2S
Continuous (DC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –8V to 40% of VDS
Peak AC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –8V to +20V
Drain–to–Gate Voltage, VDG1 or VDG2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V
Pulsed Drain Current (Note 1), ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Transistor Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.67mW/°C
Operating Ambient Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Lead Temperature (During Soldering, 1/32” from seating surface, 10sec max), TL . . . . . . . . +265°C
Note 1. Pulse test: Pulse Width ≤ 20ms, Duty Cycle ≤ 15%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Gate 1–to–Source Cutoff Voltage
Gate 2–to–Source Cutoff Voltage
Gate 1 Leakage Current
VG1S(off)
VG2S(off)
IG1SS
VDS = 15V, VG2S = 4V, ID = 200mA
VDS = 15V, VG1S = 0, ID = 200mA
VG1S = 20V, VG2S = 0, VDS = 0
Gate 2 Leakage Current
IG2SS VG2S = 20V, VG1S = 0, VDS = 0
Min
–
–
–
–
Typ Max
–2 –
–2 –
–1
–1
Unit
V
V
nA
nA
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Pages | Pages 2 | ||
Télécharger | [ NTE221 ] |
No | Description détaillée | Fabricant |
NTE22 | Silicon NPN Transistor AF PO / General Purpose Amp / Driver | NTE |
NTE221 | MOSFET Dual Gate / N-Channel for VHF TV Receivers Applications | NTE |
NTE222 | Field Effect Transistor Dual Gate N-Channel MOSFET | NTE |
NTE226 | Germanium PNP Transistor Audio Power Amp | NTE |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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