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Número de pieza | NTE195A | |
Descripción | Silicon NPN Transistor RF Power Amp/Driver / CB | |
Fabricantes | NTE | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NTE195A (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! NTE195A
Silicon NPN Transistor
RF Power Amp/Driver, CB
Description:
The NTE195A is designed primarily for use in large–signal output amplifier stages. Intended for use
in Citizen–Band communications equipment operating to 30MHz. High breakdown voltages allow a
high percentage of up–modulation in AM circuits.
Features:
D Specified 12.5V, 28MHz Characteristic:
Power Output = 3.5W
Power Gain = 10dB
Efficiency
= 70% Typical
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0V
Collector Current–Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.6mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
ON Characteristics
V(BR)CES IC = 200mA, VBE = 0
V(BR)EB IE = 1mA, IC = 0
O
ICBO VCB = 15V, IE = 0
DC Current Gain
Dynamic Characteristics
hFE VCE = 2V, IC = 400mA
Capacitance
Cob VCB = 12.5V, IE = 0, f = 1MHz
Min Typ Max Unit
70 – – V
4––V
– – 0.01 mA
30 – – –
– 35 70 pF
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet NTE195A.PDF ] |
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