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Numéro de référence | NTE184 | ||
Description | Silicon Complementary Transistors Audio Power Amp / Switch | ||
Fabricant | NTE | ||
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1 Page
NTE184 (NPN) & NTE185 (PNP)
Silicon Complementary Transistors
Audio Power Amp, Switch
Description:
The NTE184 (NPN) and NTE185 (PNP) are silicon complementary transistors in a TO126 plastic
package designed for use in power amplifier and switching circuits.
Features:
D Excellent Safe Area Limits
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 0.1A, IB = 0, Note 1
80 – – V
Collector Cutoff Current
ICEO
ICEX
ICBO
VCE = 80V, IB = 0
VCE = 80V, VEB(off) = 1.5V
VCE = 80V, VEB(off) = 1.5V, TC = +150°C
VCB = 80V, IE = 0
–
–
–
–
– 1.0 mA
– 0.1 mA
– 2.0 mA
– 0.1 mA
Emitter Cutoff Current
IEBO VBE = 5V, IC = 0
– – 1.0 mA
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Pages | Pages 2 | ||
Télécharger | [ NTE184 ] |
No | Description détaillée | Fabricant |
NTE18 | Silicon Complementary Transistors High Voltage / High Current Capacity Driver | NTE |
NTE180 | Silicon Power Transistor High Power Audio Amplifier | NTE |
NTE1800 | Integrated Circuit TV Multiplex Sound Decoder | NTE |
NTE1801 | Integrated Circuit TV dbx Noise Reduction System | NTE |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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