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PDF NTE16003 Data sheet ( Hoja de datos )
| Número de pieza | NTE16003 | |
| Descripción | Silicon NPN Transistor RF Power Output / PO = 7W / 175MHz | |
| Fabricantes | NTE | |
| Logotipo |  |
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NTE16003
Silicon NPN Transistor
RF Power Output, PO = 7W, 175MHz
Description:
The NTE16003 is an RF power transistor in a TO60 type case that employs a multi emitter electrode
design. This feature together with a heavily diffused base matrix located between the individual emit-
ters results in high RF current handling capability, high power gain, low base resistance, and low out-
put capacitance. This device is intended for Class A, B, or C amplifier, oscillator, or frequency multipli-
er circuits and is specifically designed for operation in the VHF–UHF region.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC (max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.6W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66.4mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +15°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
ICEO VCE = 30V, IB = 0
– – 0.1 mA
Collector–Base Breakdown Voltage V(BR)CBO IC = 0.1mA, IE = 0
65 – – V
Emitter–Base Breakdown Voltage V(BR)EBO IE = 0.1mA, IC = 0
4––V
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 0 to 200mA, IB = 0, Note 1 40 – – V
Collector–Emitter Breakdown Voltage V(BR)CEV IC = 0 to 200mA, VBE = –1.5V, 65 – – V
Note 1
Output Capacitance
Current Gain–Bandwidth Product
Cob VCB = 30V, IC = 0, f = 1MHz
fT VCE = 28V, IC = 150mA,
f = 100MHz
– – 10 pF
– 500 – MHz
RF Power Output, Class C,
Unneutralized
Pout f = 175MHz, VCE = 28V,
PIN = 1W
3 – –W
Note 1. Pulsed through 25mH inductor, Duty Factor = 50%
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet NTE16003.PDF ] | |
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