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NTE - Silicon NPN Transistor VHF Amp / Mixer / Oscillator / UHF OSC

Numéro de référence NTE15
Description Silicon NPN Transistor VHF Amp / Mixer / Oscillator / UHF OSC
Fabricant NTE 
Logo NTE 





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NTE15 fiche technique
NTE15
Silicon NPN Transistor
VHF Amp, Mixer, Oscillator, UHF OSC
Features:
D High Transition Frequency: fT = 1.1GHz
D Low Base Resistance and High Gain
D Excellent Noise Characteristics
Applications:
D VHF Mixers and Oscillators
D UHF Oscillators
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V(BR)CEO IC = 1mA
V(BR)CBO IC = 50µA
V(BR)EBO IE = 50µA
ICBO VCB = 20V
IEBO VEB = 3V
19 – – V
30 – – V
5––V
– – 0.5 µA
– – 0.5 µA
DC Current Gain
Collector Saturation Voltage
Transition Frequency
Output Capacitance
hFE
VCE(sat)
fT
Cob
VCE = 10V, IC = 5mA
IC = 10mA, IB = 1mA
VCE = 5V, IE = 10mA
VCB = 10V, f = 1MHz
39 – – –
– 0.1 – V
– 600 1100 MHz
– 1.2 1.5 pF
Collector–Base Time Constant
Cdbb IC = 10mA, VCB = 5V,
f = 31.8MHz
– 10 15 pS

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