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Numéro de référence | NTE102 | ||
Description | Germanium Complementary Transistors Power Output / Driver | ||
Fabricant | NTE | ||
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NTE102 (PNP) & NTE103 (NPN)
Germanium Complementary Transistors
Power Output, Driver
Description:
The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for me-
dium–speed saturated switching applications.
Features:
D Low Collector–Emitter Saturation Voltage:
VCE(sat) = 200mV Max @ IC = 24mA
D High Emitter–Base Breakdown Voltage:
V(BR)EBO = 12V Min @ IE = 20µA
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA
Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate Above +25° . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above +25° . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +100°C
Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +100°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
V(BR)CBO IC = 20µA, IE = 0
V(BR)EBO IE = 20µA, IC = 0
Punch–Through Voltage
Collector Cutoff Current
Emitter Cutoff Current
VPT
ICBO
IEBO
VEBfl = 1V, Note 1
VCB = 12V, IE = 0
VCB = 12V, IE = 0, TA = +80°C
VEB = 2.5V, IC = 0
Min Typ Max Unit
25 – – V
12 – – V
24 – – V
– 0.8 5.0 µA
– 20 90 µA
– 0.5 2.5 µA
Note 1. VPT is determined by measuring the Emitter–Base floating potential VEBfl, using a voltmeter
with 11MΩ minimum input impedance. The Collector–Base Voltage, VCB, is increased until
VEBfl = 1V; this value of VCB = (VPT + 1).
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Pages | Pages 2 | ||
Télécharger | [ NTE102 ] |
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