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PDF NTB75N06T4 Data sheet ( Hoja de datos )
| Número de pieza | NTB75N06T4 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON | |
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NTP75N06, NTB75N06
Power MOSFET
75 Amps, 60 Volts, N−Channel
TO−220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• Pb−Free Packages are Available
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MW)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
60
60
"20
"30
Vdc
Vdc
Vdc
ID
ID
IDM
PD
TJ, Tstg
75
50
225
214
1.4
2.4
−55 to
+175
Adc
Apk
W
W/°C
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, L = 0.3 mH
IL(pk) = 75 A, VDS = 60 Vdc)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
EAS
RqJC
RqJA
TL
844 mJ
°C/W
0.7
62.5
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
http://onsemi.com
75 AMPERES, 60 VOLTS
RDS(on) = 9.5 mW
N−Channel
D
G
S
MARKING
DIAGRAMS
4
Drain
4
TO−220
CASE 221A
STYLE 5
75N06
AYWW
1
2
3
1
Gate
3
Source
2
Drain
4
Drain
4 D2PAK
75N06
CASE 418B
AYWW
2 STYLE 2
32
1 Drain 3
Gate
Source
75N06
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 2
1
Publication Order Number:
NTP75N06/D
1 page  
1.0
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
0.0001
NTP75N06, NTB75N06
P(pk)
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1 READ TIME AT t1
t2 TJ(pk) − TC = P(pk) RqJC(t)
DUTY CYCLE, D = t1/t2
0.001
0.01
t, TIME (ms)
Figure 13. Thermal Response
0.1
1.0 10
ORDERING INFORMATION
Device
Package
Shipping†
NTP75N06
TO−220
50 Units/Rail
NTP75N06G
TO−220
(Pb−Free)
50 Units/Rail
NTB75N06
NTB75N06G
D2PAK
D2PAK
(Pb−Free)
50 Units/Rail
50 Units/Rail
NTB75N06T4
NTB75N06T4G
D2PAK
D2PAK
(Pb−Free)
800 Tape & Reel
800 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NTB75N06T4.PDF ] | |
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