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PDF NJG1102F1 Data sheet ( Hoja de datos )
| Número de pieza | NJG1102F1 | |
| Descripción | LOW NOISE AMPLIFIER GaAs MMIC | |
| Fabricantes | New Japan Radio | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NJG1102F1 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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NJG1102F1
LOW NOISE AMPLIFIER GaAs MMIC
nGENERAL DESCRIPTION
NJG1102F1 is a Low Noise Amplifier GaAs MMIC
designed for 800MHz band cellular phone handsets.
This amplifier provides low current consumption and
low noise figure at low supply voltage of 2.5V, low noise
of 1.5dB and low current consumption of 3mA at supply
voltage of 2.7V.
NJG1102F1 includes internal self-bias circuit and input
DC blocking capacitor with small package of MTP6-1.
nPACKAGE OUTLINE
NJG1102F1
nFEATURES
lLow voltage operation
lLow current consumption
lHigh small signal gain
lLow noise figure
lHigh Input IP3
lHigh output IP3
lPackage
+2.7V typ.
3mA typ.
17dB typ. @f=820MHz
1.4dB typ. @f=820MHz
-3dBm typ. @f=820.0+820.1MHz
14dBm typ. @f=820.0+820.1MHz
MTP6-1 (Mount Size: 2.8 x 2.9 x 1.2mm)
nPIN CONFIGURATION
F1 TYPE
(Top View)
16
Pin connection
1.LNAOUT
2.NC
2 5 3.GND
4.GND
5.GND
6.LNAIN
34
Note:
is package orientation mark.
-1-
1 page  
nTYPICAL CHARACTERISTICS
S21 vs. frequency(~20GHz)
(V =2.7V,I =3mA)
DD DD
25
20
15
10
5
0
-5
-10
-15
-20
-25
0 2 4 6 8 10 12 14 16 18
frequency(GHz)
20
25
20
15
10
5
0
-5
-10
-15
-20
-25
0
S11 vs. frequency(~20GHz)
(V =2.7V,I =3mA)
DD DD
2 4 6 8 10 12 14 16 18 20
frequency(GHz)
NJG1102F1
S12 vs. frequency(~20GHz)
(V =2.7V,I =3mA)
DD DD
50
40
30
20
10
0
-10
-20
-30
-40
-50
0 2 4 6 8 10 12 14 16 18 20
frequency(GHz)
S22 vs. frequency(~20GHz)
(V =2.7V,I =3mA)
DD DD
25
20
15
10
5
0
-5
-10
-15
-20
-25
0 2 4 6 8 10 12 14 16 18 20
frequency(GHz)
-5-
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NJG1102F1.PDF ] | |
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