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PDF NGD8201NT4 Data sheet ( Hoja de datos )
| Número de pieza | NGD8201NT4 | |
| Descripción | Ignition IGBT | |
| Fabricantes | ON | |
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NGD8201N
Ignition IGBT
20 A, 400 V, N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• DPAK Package Offers Smaller Footprint for Increased Board Space
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)
Applications
• Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ TC = 25°C − Pulsed
VCES
VCER
VGE
IC
440
440
"15
20
50
V
V
V
ADC
AAC
Continuous Gate Current
Transient Gate Current (t ≤ 2 ms,
f ≤ 100 Hz)
IG 1.0 mA
IG 20 mA
ESD (Charged−Device Model)
ESD
2.0 kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 125 W
0.83 W/°C
Operating & Storage Temperature Range TJ, Tstg −55 to +175 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
20 Amps
400 Volts
VCE(on) = 1.3 V @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
4
12
3
DPAK
CASE 369C
STYLE 7
E
MARKING
DIAGRAM
YWW
NGD
8201N
NGD8201N= Device Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping†
NGD8201NT4
DPAK 2500 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 4
1
Publication Order Number:
NGD8201N/D
1 page  
NGD8201N
TYPICAL ELECTRICAL CHARACTERISTICS
45
40 VCE = 5 V
35
30
25
10000
1000
100
VCE = −24 V
20
15 TJ = 25°C
10
5 TJ = 175°C
0 TJ = −40°C
0 0.5 1 1.5 2 2.5 3 3.5 4
VGE, GATE TO EMITTER VOLTAGE (V)
10
VCE = 200 V
1.0
0.1
−50 −25 0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Transfer Characteristics
Figure 8. Collector−to−Emitter Leakage
Current vs. Temperature
2.50
2.25
2.00
Mean + 4 s
Mean
1.75
1.50 Mean − 4 s
1.25
1.00
0.75
0.50
0.25
−050 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
10000
1000
100
10
1.0
0.1
0
Figure 9. Gate Threshold Voltage vs.
Temperature
Ciss
Coss
Crss
5
10 15
20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 10. Capacitance vs.
Collector−to−Emitter Voltage
25
12
10 tfall
8
tdelay
6
VCC = 300 V
4 VGE = 5.0 V
RG = 1000 W
2 IC = 9.0 A
RL = 33 W
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Resistive Switching Fall Time vs.
Temperature
12
VCC = 300 V
10 VGE = 5.0 V
RG = 1000 W
8
IC = 9.0 A
L = 300 mH
6
4
tdelay
tfall
2
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Inductive Switching Fall Time vs.
Temperature
http://onsemi.com
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