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PDF NESG2046M33 Data sheet ( Hoja de datos )
| Número de pieza | NESG2046M33 | |
| Descripción | NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION | |
| Fabricantes | NEC | |
| Logotipo |  |
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PRELIMINARY DATA SHEET
NEC's NPN SiGe TRANSISTOR NESG2046M33
FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
FEATURES
• IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS:
NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• HIGH BREAKDOWN VOLTAGE TECHNOLOGY
FOR SIGE TRANSISTORS :
VCEO (absolute maximum ratings) = 5.0 V
• 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE
ORDERING INFORMATION
PART NUMBER
NESG2046M33-A
NESG2046M33-T3-A
QUANTITY
50 pcs (Non reel)
10 kpcs/reel
SUPPLYING FORM
• 8 mm wide embossed taping
• Pin 2 (Base) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot Note
Tj
Tstg
RATINGS
13
5
1.5
40
130
150
−65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
UNIT
V
V
V
mA
mW
°C
°C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
California Eastern Laboratories
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet NESG2046M33.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NESG2046M33 | NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION | NEC |
| NESG2046M33-A | NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION | NEC |
| NESG2046M33-T3-A | NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION | NEC |
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