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Número de pieza | NESG2021M16-T3 | |
Descripción | NPN SiGe HIGH FREQUENCY TRANSISTOR | |
Fabricantes | California Micro Devices Corp | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NESG2021M16-T3 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! PRELIMINARY DATA SHEET
NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
NESG2021M16
FEATURES
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
VCEO = 5 V (Absolute Maximum)
• LOW NOISE FIGURE:
NF = 0.9 dB at 2 GHz
NF = 1.3 dB at 5.2 GHz
• HIGH MAXIMUM STABLE GAIN:
MSG = 22.5 dB at 2 GHz
• LOW PROFILE M16 PACKAGE:
6-pin lead-less minimold
M16
DESCRIPTION
NEC's NESG2021M16 is fabricated using NEC s high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifiers,
medium power amplifiers, and oscillators.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
NESG2021M16
M16
SYMBOLS
NF
Ga
NF
Ga
MSG
|S21E|2
P1dB
OIP3
fT
Cre
ICBO
IEBO
hFE
PARAMETERS AND CONDITIONS
UNITS
Noise Figure at VCE = 2 V, IC = 3 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
dB
Associated Gain at VCE = 2 V, IC = 3 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
dB
Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
dB
Associated Gain at VCE = 2 V, IC = 3 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
dB
Maximum Stable Gain1 at VCE = 3 V, IC = 10 mA, f = 2 GHz
dB
Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz
dB
Output Power at 1dB Compression Point at
VCE = 3 V, ICQ = 12 mA, f = 2 GHz
dBm
Output 3rd Order Intercept Point at VCE = 3 V, ICQ = 12 mA, f = 2 GHz dBm
Gain Bandwidth Product at VCE = 3 V, IC = 10 mA, f = 2 GHz
GHz
Reverse Transfer Capacitance2 at VCB = 2 V, IE = 0 mA, f = 1 GHz
pF
Collector Cutoff Current at VCB = 5V, IE = 0
nA
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
DC Current Gain3 at VCE = 2 V, IC = 5 mA
Notes:
1. MSG = S21
S12
2. Collector to base capacitance when the emitter grounded.
3. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
MIN
15.0
20.0
17.0
20
130
TYP
1.3
10.0
0.9
18.0
22.5
19.0
9
17
25
0.1
190
MAX
1.2
0.2
100
100
260
California Eastern Laboratories
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet NESG2021M16-T3.PDF ] |
Número de pieza | Descripción | Fabricantes |
NESG2021M16-T3 | NPN SiGe HIGH FREQUENCY TRANSISTOR | California Micro Devices Corp |
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