|
|
Número de pieza | NES1823P-50 | |
Descripción | 50 W L-BAND PUSH-PULL POWER GaAs MES FET | |
Fabricantes | NEC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NES1823P-50 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NES1823P-50
50 W L-BAND PUSH-PULL POWER GaAs MES FET
DESCRIPTION
The NES1823P-50 is a 50 W push-pull type GaAs MES FET designed for high power transmitter applications for
PCS, DCS, PHS, and IMT2000 base station systems. It is capable of delivering 50 W of output power (CW) with high
linear gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz, however with different
matching, 60 MHz or less of instantaneous bandwidth can be achieved anywhere from 0.8 to 2.3 GHz. The device
employs 0.9 µm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior
performance, thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• Push-pull type N-channel GaAs MES FET
• High output power: Pout = 50 W TYP.
• High linear gain: GL = 10.5 dB TYP.
• High power added efficiency: ηadd = 40 % TYP. @ VDS = 10.0 V, IDset = 4.0 A (total), f = 2.20 GHz
ORDERING INFORMATION (PLAN)
Part Number
NES1823P-50
Package
T-86
Supplying Form
ESD protective envelope
Remark To order evaluation samples, consult your NEC sales representative.
Caution Please handle this device at static-free workstation, because this is an electrostatic
sensitive device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14996EJ1V0DS00 (1st edition)
Date Published July 2000 NS CP(K)
Printed in Japan
©
2000
1 page NES1823P-50
RECOMMENDED MOUNTING CONDITIONS FOR CORRECT USE
(1) Fix to heat sink or mount surface completely with screws at the four holes of the flange.
(2) The recommended torque strength of the screws is 30 N typical using M2.3 type screws.
(3) The recommended flatness of the mount surface is less than ±10 µm (roughness of surface is ∇∇∇).
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Partial Heating
Soldering Conditions
Pin temperature: 260 °C or below,
Time: 5 seconds or less (per pin row)
Recommended Condition Symbol
−
For details of recommended soldering conditions, please contact your local NEC sales office.
Preliminary Data Sheet P14996EJ1V0DS00
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet NES1823P-50.PDF ] |
Número de pieza | Descripción | Fabricantes |
NES1823P-50 | 50 W L-BAND PUSH-PULL POWER GaAs MES FET | NEC |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |