PDF NEL2004F02-24 Data sheet ( Hoja de datos )

Número de pieza	NEL2004F02-24
Descripción	NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier
Fabricantes	NEC
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Hay una vista previa y un enlace de descarga de NEL2004F02-24 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas
No Preview Available ! DATA SHEET SILICON POWER TRANSISTOR NEL2004F02-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2004F02-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability. FEATURES • High Linear Power and Gain • Low Internal Modulation Distortion • High Reliability Gold Metallization • Emitter Ballasting • 24 V Operation OUTLINE DIMENSIONS (Unit: mm) 2 2 ±0.2 3 ±0.2 2 ±0.2 2 × φ3.2 ±0.3 1 1 1 3 1 3.6 ±0.5 3.6 ±0.5 12.4 ±0.2 9.2 ±0.2 4.6 ±0.2 ABSOLUTE MAXIMUM RATING (TA = 25 ˚C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector to Emitter Voltage Collector Current Power Dissipation Thermal Resistance Junction Temperature Storage Temperature SYMBOL VCBO VCER VEBO VCEO IC PT Rth(j-c) Tj Tstg SPECIFIED CONDITION R = 10 Ω 1 - EMITTER 2 - BASE 3 - COLLECTOR RATINGS 45 30 3 18 1.5 19.4 9 200 –65 to 150 UNIT V V V V A W ˚C/W ˚C ˚C Document No. P11582EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 1 page NEL2004F02-24 S-PARAMETER NEL2004 Class A VCC = 20 V, Icq = 0.25 A FREQUENCY S11 GHz MAG ANG (DEG) 1.70 1.71 1.72 1.73 1.74 1.75 1.76 1.77 1.78 1.79 1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 1.89 1.90 1.91 1.92 1.93 1.94 1.95 1.96 1.97 1.98 1.99 2.00 0.70 0.69 0.69 0.69 0.69 0.69 0.69 0.69 0.69 0.69 0.69 0.69 0.69 0.70 0.69 0.70 0.70 0.70 0.70 0.70 0.71 0.71 0.71 0.71 0.72 0.72 0.73 0.73 0.73 0.74 0.74 171 171 172 172 172 173 173 173 173 174 174 175 175 175 175 175 176 176 176 177 177 177 177 178 178 178 178 178 179 179 179 NEL2004 Class AB VCC = 24 V, Icq = 0.04 A FREQUENCY S11 GHz MAG ANG (DEG) 1.70 1.71 1.72 1.73 1.74 1.75 1.76 1.77 1.78 1.79 1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 1.89 1.90 1.91 1.92 1.93 1.94 1.95 1.96 1.97 1.98 1.99 2.00 0.75 0.75 0.75 0.75 0.74 0.74 0.74 0.73 0.73 0.73 0.73 0.73 0.73 0.73 0.72 0.72 0.72 0.72 0.72 0.72 0.72 0.72 0.72 0.72 0.72 0.72 0.72 0.72 0.72 0.72 0.72 167 167 167 167 167 167 168 168 168 168 168 169 169 169 169 169 169 170 170 170 170 170 171 171 171 172 172 172 173 173 173 S12 MAG ANG (DEG) 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.04 0.04 0.05 0.05 0.05 0.04 0.04 0.04 0.04 0.04 0.04 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.02 –26 –26 –27 –29 –30 –31 –31 –32 –33 –35 –37 –37 –38 –45 –49 –50 –46 –46 –47 –49 –50 –51 –52 –54 –55 –57 –58 –60 –61 –62 –64 S12 MAG ANG (DEG) 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.02 0.02 0.02 0.02 –26 –27 –28 –29 –30 –30 –30 –31 –33 –35 –36 –39 –41 –42 –42 –43 –45 –45 –46 –48 –50 –52 –52 –53 –54 –57 –59 –61 –62 –64 –66 S21 MAG ANG (DEG) 1.68 1.70 1.71 1.71 1.69 1.67 1.65 1.66 1.67 1.67 1.65 1.62 1.60 1.61 1.62 1.62 1.60 1.56 1.54 1.55 1.56 1.56 1.53 1.50 1.48 1.48 1.48 1.47 1.45 1.44 1.42 –16 –18 –19 –20 –22 –23 –24 –25 –26 –28 –30 –31 –32 –32 –34 –35 –38 –38 –39 –39 –41 –43 –46 –46 –47 –47 –49 –50 –52 –53 –54 S21 MAG ANG (DEG) 1.09 1.11 1.11 1.12 1.11 1.10 1.09 1.09 1.11 1.11 1.10 1.09 1.08 1.08 1.09 1.10 1.08 1.06 1.05 1.06 1.07 1.07 1.06 1.04 1.03 1.03 1.04 1.03 1.02 1.01 1.00 –25 –26 –28 –29 –31 –32 –33 –33 –34 –36 –39 –40 –41 –41 –42 –44 –46 –47 –48 –48 –50 –52 –54 –55 –56 –56 –58 –60 –61 –63 –64 S22 MAG ANG (DEG) 0.77 0.78 0.79 0.79 0.80 0.81 0.81 0.82 0.83 0.84 0.84 0.85 0.85 0.86 0.87 0.87 0.88 0.89 0.89 0.90 0.90 0.91 0.92 0.92 0.92 0.93 0.93 0.94 0.94 0.94 0.95 –149 –150 –150 –150 –150 –151 –151 –151 –152 –152 –152 –153 –153 –153 –154 –154 –155 –155 –156 –156 –157 –157 –158 –158 –159 –159 –160 –160 –161 –161 –162 S22 MAG ANG (DEG) 0.87 0.87 0.88 0.88 0.88 0.89 0.89 0.89 0.90 0.90 0.91 0.91 0.91 0.92 0.92 0.92 0.93 0.93 0.94 0.94 0.94 0.94 0.95 0.95 0.95 0.95 0.96 0.96 0.96 0.96 0.97 –148 –149 –149 –149 –149 –150 –150 –150 –151 –151 –152 –152 –152 –153 –153 –153 –154 –154 –155 –155 –155 –156 –156 –157 –157 –158 –158 –159 –159 –160 –160 5 5 Page [MEMO] NEL2004F02-24 11 11 Page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
NEL2004F02-24	NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier	NEC

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