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PDF NE960R200 Data sheet ( Hoja de datos )
| Número de pieza | NE960R200 | |
| Descripción | 0.2 W X / Ku-BAND POWER GaAs MES FET | |
| Fabricantes | NEC | |
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PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NE960R2 SERIES
0.2 W X, Ku-BAND POWER GaAs MES FET
DESCRIPTION
The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Ku-
band microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear
gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers
etc. The NE961R200 and the NE960R200 are available in chip form. The NE960R200 has a via hole source
grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R275 is available in a hermetically
sealed ceramic package. Reliability and performance uniformity are assured by NEC’s stringent quality and control
procedures.
FEATURES
• High Output Power
: Po (1 dB) = +25.0 dBm TYP.
• High Linear Gain
: 10.0 dB TYP.
• High Power Added Efficiency: 35 % TYP. @VDS = 9 V, IDset = 90 mA, f = 14.5 GHz
ORDERING INFORMATION
Part Number
NE960R200
NE961R200
NE960R275
Package
00 (CHIP)
75
Supplying Form
ESD protective envelope
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE960R200, NE960R275, NE961R200)
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P13775EJ2V0DS00 (2nd edition)
Date Published July 1999 N CP(K)
Printed in Japan
The mark shows major revised points.
©
1998, 1999
1 page  
NE960R2 SERIES
[NE960R200]
TEST CONDITIONS: VDS = 9 V, IDset = 90 mA
FREQUENCY
GHz
S11
MAG. ANG. (deg.)
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.87
0.84
0.82
0.82
0.82
0.81
0.79
0.77
0.79
0.80
0.80
0.82
0.84
0.83
0.84
0.83
0.84
−97
−117
−131
−139
−145
−148
−150
−153
−157
−162
−169
−176
−178
178
175
173
170
S21
MAG. ANG. (deg.)
7.60
3.84
2.98
2.46
2.10
1.85
1.57
1.45
1.33
1.23
1.17
1.13
0.95
0.83
0.78
0.74
0.59
−166
−147
−135
−109
−82
−54
−29
1
30
56
82
104
129
165
−165
−137
−112
S12
MAG. ANG. (deg.)
0.061
0.062
0.065
0.069
0.069
0.064
0.059
0.072
0.059
0.057
0.070
0.043
0.061
0.048
0.049
0.044
0.061
104
124
159
−173
141
−118
−72
−47
−13
24
56
79
128
137
−172
−131
−106
S22
MAG.
ANG. (deg.)
0.36
0.34
0.33
0.34
0.37
0.40
0.43
0.47
0.50
0.51
0.52
0.54
0.55
0.57
0.57
0.57
0.56
−49
−64
−74
−85
−93
−99
−103
−106
−108
−110
−114
−118
−122
−126
−129
−132
−142
Caution S-parameters include bond wires.
Gate : Total 2 wires, 1 per bond pad, 300 µm long each wire.
Drain : Total 2 wires, 1 per bond pad, 300 µm long each wire.
Source : No bond wires.
Wire : 25 µm diameter, gold.
Preliminary Data Sheet P13775EJ2V0DS00
5
5 Page 
[MEMO]
NE960R2 SERIES
Preliminary Data Sheet P13775EJ2V0DS00
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NE960R200.PDF ] | |
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