DataSheetWiki


NE960R2 fiches techniques PDF

NEC - 0.2 W X / Ku-BAND POWER GaAs MES FET

Numéro de référence NE960R2
Description 0.2 W X / Ku-BAND POWER GaAs MES FET
Fabricant NEC 
Logo NEC 





1 Page

No Preview Available !





NE960R2 fiche technique
PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NE960R2 SERIES
0.2 W X, Ku-BAND POWER GaAs MES FET
DESCRIPTION
The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Ku-
band microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear
gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers
etc. The NE961R200 and the NE960R200 are available in chip form. The NE960R200 has a via hole source
grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R275 is available in a hermetically
sealed ceramic package. Reliability and performance uniformity are assured by NEC’s stringent quality and control
procedures.
FEATURES
• High Output Power
: Po (1 dB) = +25.0 dBm TYP.
• High Linear Gain
: 10.0 dB TYP.
• High Power Added Efficiency: 35 % TYP. @VDS = 9 V, IDset = 90 mA, f = 14.5 GHz
ORDERING INFORMATION
Part Number
NE960R200
NE961R200
NE960R275
Package
00 (CHIP)
75
Supplying Form
ESD protective envelope
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE960R200, NE960R275, NE961R200)
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P13775EJ2V0DS00 (2nd edition)
Date Published July 1999 N CP(K)
Printed in Japan
The mark shows major revised points.
©
1998, 1999

PagesPages 12
Télécharger [ NE960R2 ]


Fiche technique recommandé

No Description détaillée Fabricant
NE960R2 0.2 W X / Ku-BAND POWER GaAs MES FET NEC
NEC
NE960R200 0.2 W X / Ku-BAND POWER GaAs MES FET NEC
NEC
NE960R275 0.2 W X / Ku-BAND POWER GaAs MES FET NEC
NEC
NE960R5 0.5 W X / Ku-BAND POWER GaAs MES FET NEC
NEC

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche