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NEC - NPN SILICON TRANSISTOR

Numéro de référence NE856M13
Description NPN SILICON TRANSISTOR
Fabricant NEC 
Logo NEC 





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NE856M13 fiche technique
PRELIMINARY DATA SHEET
NPN SILICON TRANSISTOR NE856M13
FEATURES
• NEW MINIATURE M13 PACKAGE:
– Small transistor outline –
1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
• LOW NOISE FIGURE:
NF = 1.4 dB at 1 GHz
• HIGH COLLECTOR CURRENT:
IC MAX = 100 mA
DESCRIPTION
The NE856M13 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/flat lead style "M13" package
is ideal for today's portable wireless applications. The NE856
is also available in chip, Micro-x, and eight different low cost
plastic surface mount package styles.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M13
+0.1
0.5 0.05
0.15+00..015
0.3
2
1.0
+0.1
0.05
1
0.35
3 0.7
0.35
3
+0.1
0.2 0.05
1
0.1
0.5±0.05
0.1 0.15+00..015
+0.1
0.125 0.05
2
0.2
Bottom View
0.2
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
fT
NF
|S21E|2
hFE2
ICBO
IEBO
CRE3
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz
Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz
Forward Current Gain at VCE = 3 V, IC = 7 mA
Collector Cutoff Current at VCB = 10 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
UNITS
GHz
dB
dB
µA
µA
pF
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width 350 µs, duty cycle 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
NE856M13
2SC5614
M13
MIN TYP MAX
3 4.5
1.4 2.5
7 10
80 145
1
1
0.7 1.5
California Eastern Laboratories

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