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Numéro de référence | NE85632 | ||
Description | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR | ||
Fabricant | NEC | ||
Logo | |||
NEC's NPN SILICON HIGH NE856
FREQUENCY TRANSISTOR SERIES
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 7 GHz
• LOW NOISE FIGURE:
1.1 dB at 1 GHz
• HIGH COLLECTOR CURRENT: 100 mA
• HIGH RELIABILITY METALLIZATION
• LOW COST
00 (CHIP)
35 (MICRO-X)
P L E A S E N O T E : part numbenrostDESCRIPTION
T h e f o l l o wdi nagt a s h e e t a r ed e s i g n .NEC's NE856 series of NPN epitaxial silicon transistors is
designed for low cost amplifier and oscillator applications. Low
noise figures, high gain, and high current capability equate to
t h i s f o r n e wwide dynamic range and excellent linearity. The NE856 series
f o roffers excellent performance and reliability at low cost. This is
f r o m e n d e d o f f i c eachieved by NEC's titanium/platinum/gold metallization sys-
tem and their direct nitride passivated base surface process.
The NE856 series is available in chip form and a Micro-x
r e c o m m c a l l s a l e spackage for high frequency applications. It is also available in
several low cost plastic package styles.
Pdleetaasiel s :NE85600
N E 8 5 6 3 5NOISE FIGURE AND GAIN
vs. FREQUENCY
VCC = 10 V, IC 7 mA
32 (TO-92)
18 (SOT 343 STYLE)
34 (SOT 89 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
4.0 20
MSG
3.5 GA
15
MAG
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
3.0 10
2.5 5
NFMIN
2.0
1.5
1.0
0.4 0.5
1.0 2 3
Frequency, f (GHz)
45
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
California Eastern Laboratories
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Pages | Pages 25 | ||
Télécharger | [ NE85632 ] |
No | Description détaillée | Fabricant |
NE85630 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR | NEC |
NE85630 | NPN Silicon RF Transistor | Renesas |
NE85632 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR | NEC |
NE85633 | NPN Silicon RF Transistor | Renesas |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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