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PDF NE85618 Data sheet ( Hoja de datos )
| Número de pieza | NE85618 | |
| Descripción | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | NEC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NE85618 (archivo pdf) en la parte inferior de esta página. Total 25 Páginas | ||
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NEC's NPN SILICON HIGH NE856
FREQUENCY TRANSISTOR SERIES
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 7 GHz
• LOW NOISE FIGURE:
1.1 dB at 1 GHz
• HIGH COLLECTOR CURRENT: 100 mA
• HIGH RELIABILITY METALLIZATION
• LOW COST
00 (CHIP)
35 (MICRO-X)
P L E A S E N O T E : part numbenrostDESCRIPTION
T h e f o l l o wdi nagt a s h e e t a r ed e s i g n .NEC's NE856 series of NPN epitaxial silicon transistors is
designed for low cost amplifier and oscillator applications. Low
noise figures, high gain, and high current capability equate to
t h i s f o r n e wwide dynamic range and excellent linearity. The NE856 series
f o roffers excellent performance and reliability at low cost. This is
f r o m e n d e d o f f i c eachieved by NEC's titanium/platinum/gold metallization sys-
tem and their direct nitride passivated base surface process.
The NE856 series is available in chip form and a Micro-x
r e c o m m c a l l s a l e spackage for high frequency applications. It is also available in
several low cost plastic package styles.
Pdleetaasiel s :NE85600
N E 8 5 6 3 5NOISE FIGURE AND GAIN
vs. FREQUENCY
VCC = 10 V, IC 7 mA
32 (TO-92)
18 (SOT 343 STYLE)
34 (SOT 89 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
4.0 20
MSG
3.5 GA
15
MAG
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
3.0 10
2.5 5
NFMIN
2.0
1.5
1.0
0.4 0.5
1.0 2 3
Frequency, f (GHz)
45
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
California Eastern Laboratories
1 page  
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE85633
FORWARD INSERTION GAIN
AND MAXIMUM AVAILABLE GAIN
vs. FREQUENCY
25
VCE = 10 V
IC = 20 mA
20
MAG
15
|S21E|2
10
5
0
0.1
0.2 0.3
0.5 0.7 1.0
2.0
Frequency, f (GHz)
NE85600
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
NFOPT
GA
(MHz)
(dB) (dB)
VCE = 10 V, IC = 7 mA
500 1.2 21.86
1000
1.4 15.82
2000
2.2 11.87
4000
4.2 5.75
ΓOPT
MAG ANG
0.20 138
0.22 158
0.49 176
0.63 -141
Rn/50
0.13
0.19
0.23
0.47
NE85630
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
NFOPT
GA
(MHz)
(dB) (dB)
VCE = 2.5 V, IC = 0.3 mA
500 1.88 5.63
800 2.63 6.45
1000
3.14 5.03
VCE = 2.5 V, IC = 1.0 mA
500 1.34 11.08
800 1.75 9.97
1000
1.98 8.33
1500
2.51 5.26
VCE = 2.5 V, IC = 3.0 mA
500 1.10 14.41
800 1.32 11.67
1000
1.50 10.34
1500
1.88 7.04
2000
2.36 5.60
VCE = 10 V, IC = 7.0 mA
500 1.15 17.20
1000
1.27 12.67
1500
1.66 9.50
2000
2.22 7.45
3000
3.30 4.62
ΓOPT
MAG ANG
0.73 79
0.78 128
0.79 149
0.58 83
0.62 134
0.63 152
0.71 176
0.37 92
0.44 143
0.48 169
0.56 177
0.60 -150
0.21 113
0.32 177
0.46 -141
0.57 -118
0.65 -92
Rn/50
1.00
0.60
0.17
0.33
0.17
0.10
0.04
0.15
0.08
0.07
0.05
0.17
0.09
0.15
0.52
0.67
0.70
NE856 SERIES
NE85635
NOISE FIGURE
vs. COLLECTOR CURRENT
6
VCE = 10 V
f = 1 GHz
5
4
3
2
1
0
1 2 3 5 7 10 20 30 50 70 100
Collector Current, IC (mA)
NE85619
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
VCE = 2.5 V, IC = 0.3 mA
500 1.73 6.03
800 2.20 4.42
VCC = 2.5 V, IC = 1.0 mA
500 1.15 11.26
800 1.50 9.15
1000
1.90 7.74
VCE = 2.5 V, IC = 3.0 mA
500 1.00 14.83
800 1.22 11.81
1000
1.35 10.46
1500
1.70 7.66
VCE = 3 V, IC = 5.0 mA
500 1.07 16.48
800 1.21 13.06
1000
1.34 11.56
1500
1.69 8.44
2000
2.17 6.99
VCE = 10 V, IC = 7.0 mA
500 1.10 18.42
800 1.24 14.90
1000
1.37 13.34
1500
1.72 10.39
2000
2.20 8.69
2500
2.75 7.31
ΓOPT
MAG ANG
0.74 73
0.74 113
0.60 75
0.58 117
0.60 136
0.43 80
0.40 122
0.46 143
0.64 174
0.30 87
0.31 129
0.37 149
0.46 171
0.52 -150
0.27 83
0.28 123
0.32 143
0.42 172
0.47 -152
0.54 -134
Rn/50
1.23
0.62
0.36
0.20
0.16
0.17
0.10
0.09
0.04
0.12
0.09
0.08
0.06
0.14
0.13
0.10
0.08
0.06
0.14
0.45
5 Page 
NE856 SERIES
TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C)
0.8 1
0.6
0.4
0.2
0.2 0.4 0.6 0.8 1
-0.2
-0.4
-0.6
-0.8 -1
1.5
2
3
4
5
1.5 2
3 45
10
20
50
10 20 -50
-20
-10
S22
-5
-4
S11
-3
180˚
-2
-1.5
Coordinates in Ohms
Frequency in GHz
VCE = 10 V, IC = 10 mA
135˚ S21
225˚
90˚
45˚
S12
0˚
.05 .10 .15 .20 .25
5.0
10.0
15.0
20.0
270˚
315˚
NE85632
VCE = 10 V, IC = 7 mA
FREQUENCY
S11
(MHz)
100
200
500
1000
1500
2000
MAG
0.71
0.54
0.40
0.34
0.34
0.37
ANG
-50
-84
-134
-173
163
140
VCE = 10 V, IC = 10 mA
100 0.62 -58
200 0.45 -95
500 0.35 -141
100 0.31 -177
1500
0.31 160
2000
0.34 138
VCE = 10 V, IC = 20 mA
100 0.45 -78
200 0.32 -116
500 0.28 -154
1000
0.27 175
1500
0.28 155
2000
0.30 134
S21
MAG
16.63
11.97
5.98
3.26
2.33
1.94
ANG
141
119
91
66
48
29
S12
MAG
0.02
0.04
0.08
0.13
0.18
0.24
ANG
70
55
58
58
57
47
20.35 135 0.02 70
13.62 113 0.03 55
6.44 89 0.07 63
3.46 65 0.13 60
2.46 48 0.19 57
2.04 30 0.25 46
26.73
15.88
7.03
3.72
2.63
2.17
125
105
85
64
47
30
0.01
0.02
0.07
0.14
0.20
0.26
69
62
70
63
58
45
S22
MAG
0.85
0.66
0.44
0.40
0.39
0.39
ANG
-22
-34
-43
-52
-70
-88
0.80 -26
0.59 -36
0.39 -42
0.36 -51
0.35 -70
0.35 -88
0.68 -31
0.47 -37
0.32 -40
0.32 -50
0.31 -70
0.31 -88
K
0.24
0.52
0.80
0.95
0.97
0.89
0.31
0.71
0.93
0.99
0.98
0.91
0.77
1.14
1.00
0.97
0.97
0.93
MAG1
(dB)
29.2
24.8
18.7
14.0
11.1
9.1
30.1
26.6
19.6
14.3
11.1
9.1
34.3
26.7
20.0
14.2
11.2
9.2
Note:
1. Gain Calculations:
( ).MAG = |S21| K ± K 2 - 1 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| , K = 1 + | ∆ | 2 - |S11| 2 - |S22| 2 , ∆ = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
11 Page | ||
| Páginas | Total 25 Páginas | |
| PDF Descargar | [ Datasheet NE85618.PDF ] | |
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