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PDF NE850R599A Data sheet ( Hoja de datos )
| Número de pieza | NE850R599A | |
| Descripción | C-BAND MEDIUM POWER GaAs MESFET | |
| Fabricantes | NEC | |
| Logotipo |  |
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C-BAND MEDIUM POWER GaAs MESFET NE850R599A
FEATURES
• HIGH OUTPUT POWER: 0.5 W
• HIGH LINEAR GAIN: 9.5 dB
• HIGH EFFICIENCY (PAE): 38%
• SUPERIOR INTERMODULATION DISTORTION
• INDUSTRY STANDARD PACKAGING
DESCRIPTION
The NE850R599A is a medium power GaAs MESFET de-
signed for up to a 1/2W output stage or as a driver for higher
power devices. The device has no internal matching and can
be used at frequencies from UHF to 8.5 GHZ. Equivalent
performance in a chip package can be obtained by using only
1 cell of the NE8500100 chip. The chips used in this series
offer superior reliability and consistent performance for which
NEC microwave semiconductors are known.
RECOMMENDED OPERATING LIMITS
SYMBOLS PARAMETERS
UNITS MIN TYP MAX
VDS Drain to Source Voltage V 9
10
TCH Channel Temperature
°C
130
GCOMP Gain Compression
dB
3.0
RG Gate Resistance
KΩ
1
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 99
5.2±0.3
1.0±0.1
4.0 MIN BOTH LEADS
Gate
φ2.2±0.2
4.3±0.2
Source
+.06
0.1 -.02
0.2 MAX
1.7±0.15
Drain
0.6±0.1
5.2±0.3
11.0±0.15
15.0±0.3
6.0±0.2
4.0±0.1
5.0 MAX
1.2
ELECTRICAL CHARACTERISTICS (TC = 25°C)
SYMBOLS
PART NUMBER
PACKAGE OUTLINE
CHARACTERISTICS
POUT
Power Out at Fixed Input Power
ηADD
Power Added Efficiency
IDS Drain Source Current
IGS Gate to Source Current
GL Linear Gain
IDSS Saturated Drain Current
VP Pinch-off Voltage
gm Transconductance
RTH Thermal Resistance (channel to case)
UNITS
dBm
%
A
mA
dB
mA
V
mS
°C/W
NE850R599A
99
MIN TYP MAX
25.5 26.5
38
140
-1.6 1.6
9.5
220 430
-3.0 -1.0
150
60
TEST CONDITIONS
PIN = 18.5 dBm1
VDS = 10 V; IDSQ = 100 mA
f = 7.2 GHz; RG = 1 KΩ
PIN = 7 dBm2
VDS = 2.5 V; VGS = 0 V
VDS = 2.5 V; IDS = 2 mA
VDS = 2.5 V; IDS = IDSS
California Eastern Laboratories
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NE850R599A.PDF ] | |
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