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PDF NE8500100 Data sheet ( Hoja de datos )
| Número de pieza | NE8500100 | |
| Descripción | 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET | |
| Fabricantes | NEC | |
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PRELIMINARY DATA SHEET
GaAs MES FET
NE85001 SERIES
1 W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator
applications and so on.
NE8500100 is the two-cells recessed gate chip used in ‘99’ package.
The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
has a PHS. (Plated Heat Sink)
NEC’s strigent quality assurance and test procedures assure the highest reliability and performance.
FEATURES
• Class A operation
• High power output
• High reliability
PHYSICAL DIMENSIONS
NE8500100 (CHIP) (unit: µm)
65
170
146
SELECTION CHART
PART NUMBER FORM
NE8500100(*)
NE8500100-WB
NE8500100-RG
chip
NE8500199
package
PERFORMANCE SPECIFIED
Pout (**)
(dBm)
GL (**)
(dB)
USABLE
FREQUENCY
(GHz)
28.5 min
9.0 typ
2.0 to 10
28.5 min
9.0 typ
2.0 to 10
100
100
100
780
640
PACKAGE CODE-99 (unit: mm)
1.0 ±0.1
* WB, RG indicate a type of containers for chips.
WB: black carrier, RG: ring,: gel-pack,
** Specified at the condition at the last page.
4.0 MIN BOTH LEADS
SOURCE
4.3 ±0.2
GATE φ 2.2 ±0.3
2 PLACES
4.0
0.1
0.2 MAX.
1.7 ±0.15
DRAIN
0.6 ±0.1
5.2 ±0.3
11.0 ±0.3
15.0 ±0.3
6.0 ±0.2
5.0 MAX.
1.2
Document No. P10968EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
© 1996
1 page  
NE85001 SERIES
CHIP HANDLING
DIE ATTACHMENT
Die attach can be accomplished with a Au-Sn (300 ±10 ˚C) performs in a forming gas environment. Epoxy die
attach is not recommended.
BONDING
Gate and drain bonding wires should be minimum length, semi-hard gold wire (3 - 8 % elongation) 30 microns or
less in diameter.
Bonding should be performed with a wedge tip that has a taper of approximately 15 %.
Die attach and bonding time should be kept to a minimum. As a general rule, the bonding operation should be
kept within a 280 ˚C _ 5 minute curve. If longer periods are required, the temperature should be lowered.
PRECAUTIONS
The user must operate in a clean, dry environment.
The chip channel is glassivated for mechanical protection only and does not preclude the necessity of a clean
environment.
The bonding equipment should be periodically checked for sources of surge voltage and should be properly
grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static
discharge.
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NE8500100.PDF ] | |
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