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PDF NE734 Data sheet ( Hoja de datos )
| Número de pieza | NE734 | |
| Descripción | NPN SILICON GENERAL PURPOSE TRANSISTOR | |
| Fabricantes | NEC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NE734 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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NPN SILICON GENERAL NE734
PURPOSE TRANSISTOR SERIES
FEATURES
• LOW NOISE FIGURE: < 3 dB at 500 MHz
• HIGH GAIN: 15 dB at 500 MHz
• HIGH GAIN BANDWIDTH PRODUCT: 2 GHz
(3 GHz for the NE73435)
• SMALL COLLECTOR CAPACITANCE: 1 pF
• DUAL CHIP CONFIGURATIONS
• HIGH RELIABILITY METALLIZATION
DESCRIPTION
The NE734 series of NPN silicon general purpose UHF
transistors provide the designer with a wide selection of
reliable transistors for high speed logic and wide-band low
noise amplifier applications. The series uses NEC's highly
reliable platinum-silicide, titanium, platinum, and gold metal-
lization system to assure uniform performance and reliability.
Besides the chip form (NE73400) several package styles are
available. While the series is designed for industrial applica-
tions, the NE734 is also available in screening levels through
space grade. The NE73433 is in the plastic Mini-Mold pack-
age designed for high-speed automated assembly operations
for large volume hybrid ICs. For applications requiring small
size and light weight the NE73430 is recommended. Forty
percent smaller than the SOT 23 version, it is ideal for hand
held portable designs. For hybrid MIC applications requiring
more performance, the NE73435 is recommended. This
device is packaged in the economical metal-ceramic, her-
metic Micro-X package.
00 (CHIP)
16
33 (SOT 23 STYLE)
12 (TO-72)
30 (SOT 323 STYLE)
39 (SOT 143 STYLE)
32 (TO-92)
35 (MICRO-X)
California Eastern Laboratories
1 page  
TYPICAL COMMON EMITTER SCATTERING PARAMETERS
NE734 SERIES
NE73412
VCE = 10 V, IC = 5 mA
FREQUENCY
(MHz)
S11
MAG
ANG
50
100
200
400
600
800
1000
1200
1400
1600
0.843
0.762
0.576
0.377
0.310
0.280
0.269
0.254
0.247
0.237
-18.0
-36.2
-65.5
-99.1
-121.1
-135.4
-147.3
-158.4
-167.1
-176.2
Coordinates in Ohms
Frequency in GHz
(VCE = 10 V, IC = 20 mA)
S21
MAG
ANG
11.367
160.6
10.158
145.0
7.898
122.0
4.802
97.1
3.358
82.4
2.578
71.8
2.074
62.5
1.721
54.5
1.439
46.6
1.181
41.5
S12
MAG
ANG
0.013
77.7
0.025
71.0
0.042
64.1
0.063
65.4
0.086
65.7
0.106
67.6
0.125
68.2
0.144
67.9
0.158
67.4
0.168
68.4
S22
MAG ANG
0.961 -9.0
0.904 -14.9
0.776 -21.6
0.682 -27.2
0.648 -33.7
0.641 -40.7
0.640 -48.8
0.641 -57.8
0.636 -67.8
0.617 -79.1
K MAG1
(dB)
0.22 29.4
0.31 26.1
0.54 22.7
0.83 18.8
0.94 15.9
1.00 13.9
1.04 11.0
1.08 9.0
1.19 7.0
1.43 4.6
VCE = 10 V, IC = 10 mA
50 0.726
100 0.599
200 0.404
400 0.272
600 0.241
800 0.230
1000
0.231
1200
0.224
1400
0.220
1600
0.210
-25.1
-48.1
-76.9
-105.4
-125.6
-138.7
-149.8
-159.9
-168.3
-177.1
18.263
14.893
9.749
5.340
3.661
2.781
2.229
1.845
1.539
1.264
153.3
133.9
111.3
91.2
78.7
69.2
60.3
52.6
44.8
40.2
0.012
0.022
0.037
0.060
0.086
0.110
0.131
0.150
0.165
0.176
76.9
69.7
67.3
71.7
70.8
71.1
70.3
69.2
67.8
67.3
0.925
0.831
0.700
0.637
0.612
0.612
0.615
0.617
0.614
0.602
-11.5
-17.2
-21.3
-25.1
-31.7
-38.6
-46.7
-55.8
-65.7
-76.9
0.30 31.8
0.48 28.3
0.74 24.2
0.95 19.5
1.00 16.3
1.02 13.2
1.03 11.2
1.07 9.3
1.16 7.3
1.35 5.0
VCE = 10 V, IC = 20 mA
50 0.585
100 0.441
200 0.296
400 0.225
600 0.220
800 0.225
1000
0.234
1200
0.230
1400
0.228
1600
0.219
-34.3
-60.7
-89.3
-116.9
-136.0
-148.0
-159.1
-170.2
-178.4
172.3
24.773
17.843
10.384
5.447
3.685
2.792
2.239
1.838
1.540
1.261
145.0
124.0
104.4
87.2
75.7
66.6
58.3
50.9
43.5
38.7
0.011
0.020
0.033
0.059
0.085
0.109
0.129
0.150
0.165
0.179
74.1 0.882 -13.5
70.4 0.767 -17.7
71.1 0.656 -19.7
74.9 0.618 -23.5
73.0 0.602 -30.0
73.3 0.600 -37.2
72.4 0.605 -45.8
71.0 0.614 -55.1
69.7 0.612 -64.8
69.1 0.597 -76.4
0.43 33.5
0.63 29.5
0.88 25.0
1.00 19.7
1.03 15.3
1.04 12.9
1.05 11.0
1.07 9.3
1.15 7.4
1.34 5.0
VCE = 10 V, IC = 30 mA
50
100
200
400
600
800
1000
1200
1400
1600
0.500
-42.1
26.236
139.8 0.010
75.0
0.859 -13.8
0.369
-71.1
17.626
119.0 0.018
70.2
0.747 -16.3
0.261 -101.5
9.845
101.1 0.032
72.2
0.658 -17.7
0.226 -129.0
5.088
85.0 0.057 76.0 0.633 -22.1
0.236 -147.0
3.447
73.9 0.082 74.4 0.619 -29.1
0.248 -158.7
2.596
65.2 0.105 74.8 0.623 -37.2
0.260 -169.1
2.079
56.7 0.126 74.4 0.629 -46.1
0.258 179.8
1.705
49.5 0.148 73.8 0.632 -55.3
0.257 170.8
1.423
42.1 0.165 72.7 0.627 -65.9
0.252 160.5
1.177
38.0 0.181 72.7 0.609 -77.6
0.50 34.2
0.73 29.9
0.93 24.9
1.03 18.4
1.05 14.9
1.05 12.6
1.05 10.8
1.07 9.0
1.17 6.9
1.35 4.6
Note:
1. Gain Calculations:
(MAG = |S21| K ±
|S12|
).K 2 - 1 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| , K = 1 + | ∆ | 2 - |S11| 2 - |S22| 2 , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
5 Page 
OUTLINE DIMENSIONS (Units in mm)
NE73400 (CHIP)
Chip Thickness: 160 µm TYP
0.35
0.3
0.26
0.082
BASE
0.35
EMITTER .056
0.05φ
0.038
PACKAGE OUTLINE 16
φ5.84 MAX
φ4.95 MAX
0.2 5.33 MAX
φ0.45
1.05 2
1
1.0
6
5
60˚
12.5 MIN
25
C1 C2
3
2.54
4
3
B1
4
B2
E1 E2
16
Internal Connection
PACKAGE OUTLINE 35
(MICRO-X)
0.5±0.06
1
2
3.8 MIN
ALL LEADS
3
+0.06
0.1 -0.04
4
2.55±0.2
φ2.1
45˚
1. Collector
2. Emitter
3. Base
4. Emitter
1.8 MAX
0.55
NE734 SERIES
PACKAGE OUTLINE 12
(TO-72)
φ5.84 MAX
φ4.95 MAX
0.25
5.33 MAX
φ0.45
φ2.54
2
12.5 MIN
13
45˚
4
1.05
1.0
1. Emitter
2. Base
3. Collector
4. Case
OUTLINE 32
(TO-92)
φ 5.2 MAX
5.5 MAX
φ 0.5
1.27
14.0 MIN
2.54
1.77 MAX
BEC
4.2 MAX
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NE734.PDF ] | |
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