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NE68639R-T1 fiches techniques PDF

NEC - SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

Numéro de référence NE68639R-T1
Description SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
Fabricant NEC 
Logo NEC 





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NE68639R-T1 fiche technique
SURFACE MOUNT NPN SILICON NE686
HIGH FREQUENCY TRANSISTOR SERIES
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz
• LOW VOLTAGE/LOW CURRENT OPERATION
• HIGH INSERTION POWER GAIN:
|S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz
|S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz
• LOW NOISE: 1.5 dB AT 2.0 GHz
18 (SOT 343 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE
MOUNT PACKAGE STYLES
b e r sDESCRIPTION
P L E A S E N O T E : p a r t n u mThe NE686 series of NPN epitaxial silicon transistors are
n o tdesigned for low voltage/low current, amplifier and oscillator
T h e f o l l o wdi nagt a s h e e t a r ed e s i g n .applications. NE686's high fT make it an excellent choice for
portable wireless applications up to 5 GHz. The NE686 die is
available in six different low cost plastic surface mount pack-
age styles.
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
f r o m t h i se n d e d f o r noef fwi c e f o r39(SOT143STYLE)
39R (SOT 143R STYLE)
r e c o m m c a l l s a l e sELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER1
EIAJ2 REGISTERED NUMBER
P l e a s ePACKAGE OUTLINE
NE68618
2SC5180
18
NE68619
2SC5181
19
NE68630
2SC5179
30
NE68633
2SC5177
33
NE68639/39R
2SC5178/78R
39/39R
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
d e t a i l s :fT
N E 6 8 6 3 0fT
NFMIN
N E 6 8 6 3 3NFMIN
N E 6 8 6 3 9|S21e|2
N E 6 8 6 3 9 R|S21e|2
hFE
Gain Bandwidth Product at
VCE = 2 V, IC = 7 mA, f = 2.0 GHz
Gain Bandwidth Product at
VCE = 1 V, IC = 5 mA, f = 2.0 GHz
Minimum Noise Figure at
VCE = 2 V, IC = 3 mA, f = 2.0 GHz
Minimum Noise Figure at
VCE = 1 V, IC = 3 mA, f = 2.0 GHz
Insertion Power Gain at
VCE = 2V, IC =7 mA, f = 2.0 GHz
Insertion Power Gain at
VCE = 1V, IC =5 mA, f = 2.0 GHz
Forward Current Gain3 at
VCE = 2 V, IC = 7 mA
GHz 12 15.5
10 13
7.5 9
10 13
10.5 13.5
GHz 10 13
8.5 12
7 8.5
8.5 12
8.5 12
dB 1.5 2.0 1.5 2.0 1.5 2.0 1.5 2.0 1.5 2.0
dB 1.5 2.0 1.5 2.0 1.5 2.0 1.5 2.0 1.5 2.0
dB 10 12
8 10.5
7.5 9
7.5 9
9.5 11.5
dB 8.5 11
79
7 8.5
7 8.5
7.5 10.5
70 140 70
140 70
140 70
140 70
140
ICBO Collector Cutoff Current
at VCB = 5 V, IE = 0 mA
nA 100 100 100 100 100
IEBO Emitter Cutoff Current
at VEB = 1 V, IC = 0 mA
nA 100 100 100 100 100
CRE4 Feedback Capacitance at
VCB = 2 V, IE = 0 mA, f = 1 MHz pF 0.3 0.5 0.4 0.6 0.4 0.6 0.5 0.6 0.3 0.5
PT Total Power Dissipation
mW 30 30 30 30 30
RTH(J-A) Thermal Resistance
(Junction to Ambient)
°C/W
833
1250
833
625
625
RTH(J-C) Thermal Resistance(Junction to Case) °C/W
Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
3. Pulsed measurement, PW 350 µs, duty cycle 2%.
4. The emitter terminal should be connected to the ground terminal of
the 3 terminal capacitance bridge.
California Eastern Laboratories

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