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What is NE68633-T1?

This electronic component, produced by the manufacturer "NEC", performs the same function as "SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR".


NE68633-T1 Datasheet PDF - NEC

Part Number NE68633-T1
Description SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
Manufacturers NEC　
Logo NEC Logo　


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SURFACE MOUNT NPN SILICON NE686
HIGH FREQUENCY TRANSISTOR SERIES
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz
• LOW VOLTAGE/LOW CURRENT OPERATION
• HIGH INSERTION POWER GAIN:
|S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz
|S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz
• LOW NOISE: 1.5 dB AT 2.0 GHz
18 (SOT 343 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE
MOUNT PACKAGE STYLES
b e r sDESCRIPTION
P L E A S E N O T E : p a r t n u mThe NE686 series of NPN epitaxial silicon transistors are
n o tdesigned for low voltage/low current, amplifier and oscillator
T h e f o l l o wdi nagt a s h e e t a r ed e s i g n .applications. NE686's high fT make it an excellent choice for
portable wireless applications up to 5 GHz. The NE686 die is
available in six different low cost plastic surface mount pack-
age styles.
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
f r o m t h i se n d e d f o r noef fwi c e f o r39(SOT143STYLE)
39R (SOT 143R STYLE)
r e c o m m c a l l s a l e sELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER1
EIAJ2 REGISTERED NUMBER
P l e a s ePACKAGE OUTLINE
NE68618
2SC5180
18
NE68619
2SC5181
19
NE68630
2SC5179
30
NE68633
2SC5177
33
NE68639/39R
2SC5178/78R
39/39R
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
d e t a i l s :fT
N E 6 8 6 3 0fT
NFMIN
N E 6 8 6 3 3NFMIN
N E 6 8 6 3 9|S21e|2
N E 6 8 6 3 9 R|S21e|2
hFE
Gain Bandwidth Product at
VCE = 2 V, IC = 7 mA, f = 2.0 GHz
Gain Bandwidth Product at
VCE = 1 V, IC = 5 mA, f = 2.0 GHz
Minimum Noise Figure at
VCE = 2 V, IC = 3 mA, f = 2.0 GHz
Minimum Noise Figure at
VCE = 1 V, IC = 3 mA, f = 2.0 GHz
Insertion Power Gain at
VCE = 2V, IC =7 mA, f = 2.0 GHz
Insertion Power Gain at
VCE = 1V, IC =5 mA, f = 2.0 GHz
Forward Current Gain3 at
VCE = 2 V, IC = 7 mA
GHz 12 15.5
10 13
7.5 9
10 13
10.5 13.5
GHz 10 13
8.5 12
7 8.5
8.5 12
8.5 12
dB 1.5 2.0 1.5 2.0 1.5 2.0 1.5 2.0 1.5 2.0
dB 1.5 2.0 1.5 2.0 1.5 2.0 1.5 2.0 1.5 2.0
dB 10 12
8 10.5
7.5 9
7.5 9
9.5 11.5
dB 8.5 11
79
7 8.5
7 8.5
7.5 10.5
70 140 70
140 70
140 70
140 70
140
ICBO Collector Cutoff Current
at VCB = 5 V, IE = 0 mA
nA 100 100 100 100 100
IEBO Emitter Cutoff Current
at VEB = 1 V, IC = 0 mA
nA 100 100 100 100 100
CRE4 Feedback Capacitance at
VCB = 2 V, IE = 0 mA, f = 1 MHz pF 0.3 0.5 0.4 0.6 0.4 0.6 0.5 0.6 0.3 0.5
PT Total Power Dissipation
mW 30 30 30 30 30
RTH(J-A) Thermal Resistance
(Junction to Ambient)
°C/W
833
1250
833
625
625
RTH(J-C) Thermal Resistance(Junction to Case) °C/W
Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%.
4. The emitter terminal should be connected to the ground terminal of
the 3 terminal capacitance bridge.
California Eastern Laboratories

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NE68633-T1 equivalent
NE686 SERIES
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
.8 1
.6
.4
1.5
2
3
4
.2
S22
5
S22
5 GHz
0.1 GHz 10
20
0 .2 .4 .6 .8 1 1.5 2 3 4 5 10
S11
5 GHz
S11
0.1 GHz
-20
-10
-.2
-.4
NE68618
-.6
-.8 -1
VCE = 0.5 V, IC = 0.5 mA
-5
-4
-3
-2
-1.5
Coordinates in Ohms
Frequency in GHz
(VCE = 1 V, IC = 3 mA)
FREQUENCY
S11
S21
S12
90˚
135˚
45˚
180˚ S21
0.1 GHz
225˚
S12 .05 .010 .015 .020 .025
0.1 GHz
S21
2.5 5 GHz
S12
5 GHz
5
0˚
315˚
7.5
270˚
S22 K
GHz
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
MAG
0.981
0.965
0.910
0.873
0.775
0.675
0.584
0.505
0.363
0.298
ANG
-5.400
-19.400
-38.900
-47.700
-70.200
-90.800
-111.200
-130.500
-175.500
122.200
MAG
1.742
1.717
1.667
1.620
1.506
1.385
1.289
1.215
1.118
1.049
ANG
170.900
156.600
134.100
123.700
98.600
76.400
56.200
38.700
6.100
-26.800
MAG
0.018
0.069
0.130
0.156
0.208
0.241
0.261
0.273
0.289
0.289
ANG
85.100
72.900
56.400
48.600
30.500
15.000
1.800
-9.500
-29.700
-47.800
MAG
0.998
0.988
0.953
0.930
0.863
0.795
0.741
0.694
0.599
0.492
ANG
-4.500
-17.400
-33.800
-41.500
-59.000
-74.000
-86.800
-98.500
-120.800
-151.700
0.088
0.128
0.247
0.310
0.455
0.595
0.714
0.820
1.013
1.187
VCE = 1.0 V, IC = 1.0 mA
0.1
0.951
-6.200
0.4
0.941
-21.900
0.8 0.854 -43.300
1.0
0.799
-53.000
1.5 0.669 -75.800
2.0
0.554
-95.800
2.5 0.456 -114.500
3.0 0.378 -132.100
4.0 0.247 -176.200
5.0 0.207 114.600
3.324
3.232
3.027
2.879
2.529
2.211
1.969
1.781
1.543
1.397
171.000
154.800
131.200
120.700
95.900
74.800
55.800
39.300
8.700
-22.400
0.015
0.057
0.105
0.125
0.161
0.184
0.199
0.211
0.238
0.269
82.800
71.800
55.200
47.700
31.200
18.500
8.000
-0.500
-15.500
-31.300
0.995
0.976
0.919
0.884
0.793
0.715
0.657
0.611
0.520
0.411
-4.900
-19.000
-36.500
-44.400
-61.500
-75.600
-87.300
-97.900
-119.200
-151.100
0.119
0.147
0.277
0.341
0.507
0.656
0.793
0.907
1.075
1.165
MAG1
(dB)
19.858
13.959
11.080
10.164
8.598
7.594
6.936
6.484
5.181
2.982
23.456
17.536
14.598
13.623
11.961
10.798
9.954
9.264
6.442
4.693
VCE = 1.0 V, IC = 3.0 mA
0.1
0.888
-9.000
0.4
0.806
-34.400
0.8
0.619
-61.800
1.0
0.537
-72.800
1.5
0.377
-95.200
2.0 0.272 -113.800
2.5 0.201 -131.800
3.0 0.149 -147.600
4.0
0.092
146.900
5.0
0.175
74.000
8.309
7.521
6.033
5.360
4.085
3.257
2.729
2.359
1.921
1.669
169.500
143.100
114.400
103.200
79.700
61.200
44.700
30.200
3.400
-24.300
0.015
0.053
0.088
0.101
0.126
0.148
0.168
0.190
0.240
0.292
86.700
66.400
50.300
44.600
34.100
26.500
19.300
12.500
-2.500
-20.500
0.981
0.905
0.758
0.695
0.582
0.516
0.478
0.453
0.387
0.284
-7.200
-27.100
-46.800
-54.100
-67.900
-78.500
-87.400
-96.200
-116.200
-150.600
0.058
0.266
0.486
0.580
0.782
0.921
1.015
1.072
1.114
1.116
27.435
21.520
18.361
17.248
15.108
13.426
11.363
9.303
6.980
5.501
VCE = 2.0 V, IC = 3.0 mA
0.1
0.888
-8.100
0.4
0.819
-31.700
0.8
0.638
-57.400
1.0
0.555
-67.400
1.5
0.389
-87.700
2.0 0.282 -103.500
2.5 0.203 -118.000
3.0 0.145 -127.900
4.0 0.056 -178.900
5.0
0.126
66.600
8.454
7.701
6.259
5.586
4.289
3.425
2.868
2.472
2.004
1.747
169.600
144.300
116.100
105.000
81.500
63.000
46.600
32.300
5.900
-21.100
0.013
0.047
0.080
0.092
0.116
0.138
0.157
0.178
0.225
0.278
81.500
68.200
52.500
46.900
36.500
28.700
21.600
14.700
-0.200
-17.500
0.986
0.918
0.785
0.727
0.621
0.558
0.524
0.503
0.446
0.346
-6.600
-25.000
-43.400
-50.500
-63.800
-74.100
-82.800
-91.300
-109.700
-138.700
0.146
0.263
0.483
0.576
0.775
0.909
0.999
1.056
1.101
1.098
28.131
22.144
18.934
17.833
15.679
13.948
12.617
9.982
7.565
6.072
Note:
1. Gain Calculation:
( ).MAG = |S21| K ± K 2 - 1 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| , K = 1 + | ∆ | 2 - |S11| 2 - |S22| 2 , ∆ = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for NE68633-T1 electronic component.


Information Total 11 Pages
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Part NumberDescriptionMFRS
NE68633-T1The function is SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR. NECNEC

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