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Numéro de référence | NE68119-T1 | ||
Description | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR | ||
Fabricant | NEC | ||
Logo | |||
1 Page
NEC's NPN SILICON HIGH NE681
FREQUENCY TRANSISTOR SERIES
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz
• LOW NOISE FIGURE:
1.2 dB at 1 GHz
1.6 dB at 2 GHz
b e r s• HIGH ASSOCIATED GAIN:
15 dB at 1 GHz
P L E A S E N O T E : p a r t n u m12 dB at 2 GHz
n o t• LOW COST
00 (CHIP)
The fotlhloiswdinagtasfhoerent eawredefsoirgn.DESCRIPTION
f r o m e n d e d o f f i c eNEC's NE681 series of NPN epitaxial silicon transistors are
designed for low noise, high gain, low cost amplifier applica-
r e c o m m c a l l s a l e stions. Both the chip and micro-x versions are suitable for
amplifier applications up to 4 GHz. The NE681 die is also
available in six different low cost plastic surface mount pack-
age styles. NE681's unique device characteristics allow you to
P l e a s euse a single matching point to simultaneously achieve both low
dNeEt a6 i8l1s 3: 5noise and high gain.
18 (SOT 343 STYLE)
35 (MICRO-X)
19 (3 PIN ULTRA
SUPER MINI MOLD)
NOISE FIGURE, GAIN MSG
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
AND MAG vs. FREQUENCY
MSG
VCE = 3 V, IC = 5 mA
20
3.0 MAG
2.0
1.0
0.5
GA
NF
1.0 2.0 3.0
Frequency, f (GHz)
10
0
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
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Pages | Pages 20 | ||
Télécharger | [ NE68119-T1 ] |
No | Description détaillée | Fabricant |
NE68119-T1 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR | NEC |
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