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Numéro de référence | NE68039-T1 | ||
Description | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR | ||
Fabricant | NEC | ||
Logo | |||
1 Page
NEC's NPN SILICON HIGH NE680
FREQUENCY TRANSISTOR SERIES
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz
• LOW NOISE FIGURE:
1.7 dB at 2 GHz
2.6 dB at 4 GHz
• HIGH ASSOCIATED GAIN:
12.5 dB at 2 GHz
8.0 dB at 4 GHz
• EXCELLENT LOW VOLTAGE
00 (CHIP)
35 (MICRO-X)
LOW CURRENT PERFORMANCE
P L E A S E N O T E : part numbenrostDESCRIPTION
T h e f o l l o wdi nagt a s h e e t a r ed e s i g n .NEC's NE680 series of NPN epitaxial silicon transistors is
designed for low noise, high gain and low cost applications.
t h i s f o r n e wBoth the chip and micro-x versions are suitable for applications
f o rup to 6 GHz. The NE680 die is also available in six different low
f r o m e n d e d o f f i c ecost plastic surface mount package styles. The NE680's high
fT makes it ideal for low voltage/low current applications, down
to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is
r e c o m m c a l l s a l e s35 mA. For higher current applications see the NE681 series.
18 (SOT 343 STYLE)
19 (3 PIN ULTRA
SUPER MINI MOLD)
PdNleeEtaa6si8el0s 3: 5NE68018
NOISE FIGURE & ASSOCIATED GAIN
vs. FREQUENCY
25
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
6V, 5 mA
3V, 5 mA
20
15
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
2.5 10
2.0 5
1.5
1.0
.5
300 500
1000 2000 3000
Frequency, f (GHz)
California Eastern Laboratories
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Pages | Pages 19 | ||
Télécharger | [ NE68039-T1 ] |
No | Description détaillée | Fabricant |
NE68039-T1 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR | NEC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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