NE661M04 Datasheet PDF - NEC
| Part Number | NE661M04 | |
| Description | NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD | |
| Manufacturers | NEC | |
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DATA SHEET
NPN SILICON RF TRANSISTOR
NE661M04
NPN SILICON RF TRANSISTOR FOR LOW CURRENT,
LOW NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
FEATURES
• Low noise and high gain with low collector current
• NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA
• Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA
• fT = 25 GHz technology
• Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)
ORDERING INFORMATION
Part Number
Quantity
NE661M04
Loose product (50 pcs)
NE661M04-T2
Taping product (3 kpcs/reel)
Packaging Style
• 8 mm wide emboss taping
• 1 pin (emitter), 2 pin (collector) feed hole direction
Remark To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
P Note
tot
Tj
Tstg
Ratings
15
3.3
1.5
12
39
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
Note TA = +25°C (free air)
THERMAL RESISTANCE
Item
Junction to Case Resistance
Junction to Ambient Resistance
Symbol
Rth j-c
Rth j-a
Value
240
650
Unit
°C/W
°C/W
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14909EJ1V0DS00 (1st edition)
Date Published June 2000 N CP(K)
Printed in Japan
©
2000
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Noise Characteristics
Noise Figure, Associated Gain vs. Collector Current
6 30
f = 1.0 GHz
Ga VCE = 2 V
5 25
4 20
3
NF
2
15
10
15
00
1 10 100
Collector Current IC (mA)
Noise Figure, Associated Gain vs. Collector Current
6 30
f = 2.0 GHz
VCE = 2 V
5 25
4 Ga
3
20
15
2
NF
1
10
5
00
1 10 100
Collector Current IC (mA)
NE661M04
Noise Figure, Associated Gain vs. Collector Current
6 30
f = 1.5 GHz
VCE = 2 V
5 25
4
Ga
3
20
15
2 NF
1
10
5
00
1 10 100
Collector Current IC (mA)
Noise Figure, Associated Gain vs. Collector Current
6 30
f = 2.5 GHz
VCE = 2 V
5 25
4
Ga
3
20
15
2 NF
1
10
5
00
1 10 100
Collector Current IC (mA)
Data Sheet P14909EJ1V0DS00
5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for NE661M04 electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ NE661M04.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| NE661M04 | The function is NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD. NEC | |
| NE661M04-T2 | The function is NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD. NEC | |
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