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PDF NE57810 Data sheet ( Hoja de datos )
| Número de pieza | NE57810 | |
| Descripción | Advanced DDR memory termination power with external reference in | |
| Fabricantes | Philipss | |
| Logotipo |  |
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INTEGRATED CIRCUITS
NE57810
Advanced DDR memory termination power
with external reference in
Product data
Supersedes data of 2002 Jul 16
2003 Sep 12
Philips
Semiconductors
1 page  
Philips Semiconductors
Advanced DDR memory termination power
with external reference in
TYPICAL PERFORMANCE CURVES
Product data
NE57810
Figure 3. VTT transient response
(output filter 50 µF ceramic)
SL01687
Figure 4. VDD-to-VTT response
(output filter 50 µF ceramic)
SL01688
SL01686
Figure 5. Vref-to-VTT transient response
(output filter 820 µF + 50 µF ceramic)
Figure 6. Vref-to-VTT transient response
(output filter 50 µF ceramic)
SL01685
2003 Sep 12
5
5 Page 
Philips Semiconductors
Advanced DDR memory termination power
with external reference in
Product data
NE57810
Cascading the NE57810 for complex memory systems
For high-performance computer systems, sometimes memory banks
are driven 180 degrees out of phase with one another such that the
apparent access time is halved (even and odd memory addresses).
To do this, it is recommended that two NE57810s are used, one to
terminate each memory bank.
Cascading NE57810 terminators offers two advantages, it improves
the system noise performance by bringing the memory SIMMs
closer to the terminator, and distributes any heat generated by the
terminator system. By using the RefOut pin from one NE57810 to
the ExtRefIn pin for the other NE57810(s) used in the system, one
can always guarantee that the VTT voltages are identical. Because
of the very tight output voltage regulation of the NE57810, the VTT
outputs should never be wired together. This is because the
terminators would ‘fight’ one another if their output were different by
only a few millivolts. This method can be used in either the normal
operating mode and the externally programmed operating mode.
This method of use can be seen in Figure 14.
+VDD
CIN
GND
VDD Master VTT
NE57810
ExtRefIn
RefOut
VSS
VREF
+VTT1
COUT
(LF)
COUT
(HF)
GND
VDD Slave VTT
NE57810
ExtRefIn
RefOut
CIN
VSS
TO OTHER
NE57810s
COUT
(LF)
Figure 14. Cascading terminator systems for complex memory systems.
+VTT2
COUT
(HF)
GND
SL01680
2003 Sep 12
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet NE57810.PDF ] | |
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