DataSheetWiki


MJ802 fiches techniques PDF

ST Microelectronics - COMPLEMENTARY HIGH POWER TRANSISTORS

Numéro de référence MJ802
Description COMPLEMENTARY HIGH POWER TRANSISTORS
Fabricant ST Microelectronics 
Logo ST Microelectronics 





1 Page

No Preview Available !





MJ802 fiche technique
® MJ802
SILICON NPN POWER TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
DESCRIPTION
The MJ802 is a silicon Epitaxial-Base power
)transistor mounted in Jedec TO-3 metal case. It
t(sis intended for general purpose power amplifier
Producand switching applications.
1
2
TO-3
- ObsoleteINTERNAL SCHEMATIC DIAGRAM
Obsolete Product(s)ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCEO Collector-emitter Voltage (IB = 0)
VCBO Collector-base Voltage (IE = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC Collector Current
IB Base Current
Ptot Total Dissipation at Tc 25 oC
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
Value
90
100
4
30
7.5
200
-65 to 200
200
Unit
V
V
V
A
A
W
oC
oC
October 2003
1/4

PagesPages 4
Télécharger [ MJ802 ]


Fiche technique recommandé

No Description détaillée Fabricant
MJ802 POWER TRANSISTORS(30A /100V /200W) Mospec
Mospec
MJ802 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS Motorola Semiconductors
Motorola Semiconductors
MJ802 High-Power NPN Silicon Transistor ON
ON
MJ802 COMPLEMENTARY HIGH POWER TRANSISTORS ST Microelectronics
ST Microelectronics

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche