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Numéro de référence | MJ802 | ||
Description | COMPLEMENTARY HIGH POWER TRANSISTORS | ||
Fabricant | ST Microelectronics | ||
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1 Page
® MJ802
SILICON NPN POWER TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
DESCRIPTION
The MJ802 is a silicon Epitaxial-Base power
)transistor mounted in Jedec TO-3 metal case. It
t(sis intended for general purpose power amplifier
Producand switching applications.
1
2
TO-3
- ObsoleteINTERNAL SCHEMATIC DIAGRAM
Obsolete Product(s)ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCEO Collector-emitter Voltage (IB = 0)
VCBO Collector-base Voltage (IE = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC Collector Current
IB Base Current
Ptot Total Dissipation at Tc ≤ 25 oC
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
Value
90
100
4
30
7.5
200
-65 to 200
200
Unit
V
V
V
A
A
W
oC
oC
October 2003
1/4
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Pages | Pages 4 | ||
Télécharger | [ MJ802 ] |
No | Description détaillée | Fabricant |
MJ802 | POWER TRANSISTORS(30A /100V /200W) | Mospec |
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MJ802 | High-Power NPN Silicon Transistor | ON |
MJ802 | COMPLEMENTARY HIGH POWER TRANSISTORS | ST Microelectronics |
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TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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