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PDF MAX2601 Data sheet ( Hoja de datos )
| Número de pieza | MAX2601 | |
| Descripción | 1W RF Power Transistors | |
| Fabricantes | Maxim Integrated | |
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19-1185; Rev 3; 9/08
EVAALVUAAILTAIOBNLEKIT
3.6V, 1W RF Power Transistors
for 900MHz Applications
General Description
The MAX2601/MAX2602 are RF power transistors opti-
mized for use in portable cellular and wireless equipment
that operates from three NiCd/NiMH cells or one Li-Ion
cell. These transistors deliver 1W of RF power from a
3.6V supply with efficiency of 58% when biased for con-
stant-envelope applications (e.g., FM or FSK). For NADC
(IS-54) operation, they deliver 29dBm with -28dBc ACPR
from a 4.8V supply.
The MAX2601 is a high-performance silicon bipolar RF
power transistor. The MAX2602 includes a high-
performance silicon bipolar RF power transistor, and a
biasing diode that matches the thermal and process
characteristics of the power transistor. This diode is
used to create a bias network that accurately controls
the power transistor’s collector current as the tempera-
ture changes.
The MAX2601/MAX2602 can be used as the final stage
in a discrete or module power amplifier. Silicon bipolar
technology eliminates the need for voltage inverters
and sequencing circuitry, as required by GaAsFET
power amplifiers. Furthermore, a drain switch is not
required to turn off the MAX2601/MAX2602. This
increases operating time in two ways: it allows lower
system end-of-life battery voltage, and it eliminates the
wasted power from a drain-switch device.
The MAX2601/MAX2602 are available in thermally
enhanced, 8-pin SO packages, which are screened to
the extended temperature range (-40°C to +85°C).
____________________________Features
♦ Low Voltage: Operates from 1 Li-Ion or
3 NiCd/NiMH Batteries
♦ DC-to-Microwave Operating Range
♦ 1W Output Power at 900MHz
♦ On-Chip Diode for Accurate Biasing (MAX2602)
♦ Low-Cost Silicon Bipolar Technology
♦ Does Not Require Negative Bias or Supply Switch
♦ High Efficiency: 58%
PART
MAX2601ESA
MAX2602ESA
Ordering Information
TEMP RANGE
-40°C to +85°C
-40°C to +85°C
PIN-PACKAGE
8 SOIC
8 SOIC
________________________Applications
Narrow-Band PCS (NPCS)
915MHz ISM Transmitters
Microcellular GSM (Power Class 5)
AMPS Cellular Phones
Digital Cellular Phones
Two-Way Paging
CDPD Modems
Land Mobile Radios
TOP VIEW
Pin Configurations
C1
E2
E3
B4
MAX2601
PSOPII
8 C C1
7 E E2
6 E BIAS 3
5 B B4
MAX2602
PSOPII
8C
7E
6E
5B
Typical Application Circuit appears at end of data sheet.
________________________________________________________________ Maxim Integrated Products 1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
1 page  
3.6V, 1W RF Power Transistors
for 900MHz Applications
Applications Information
Optimum Port Impedance
The source and load impedances presented to the
MAX2601/MAX2602 have a direct impact upon its gain,
output power, and linearity. Proper source- and load-
terminating impedances (ZS and ZL) presented to the
power transistor base and collector will ensure optimum
performance.
For a power transistor, simply applying the conjugate of
the transistor’s input and output impedances calculated
from small-signal S-parameters will yield less than opti-
mum device performance.
For maximum efficiency at VBB = 0.75V and VCC =
3.6V, the optimum power-transistor source and load
impedances (as defined in Figure 3) are:
At 836MHz: ZS = 5.5 + j2.0
ZL = 6.5 + j1.5
At 433MHz: ZS = 9.5 - j2.5
ZL = 8.5 - j1.5
ZS and ZL reflect the impedances that should be pre-
sented to the transistor’s base and collector. The pack-
age parasitics are dominated by inductance (as shown
in Figure 3), and need to be accounted for when calcu-
lating ZS and ZL.
The internal bond and package inductances shown
in Figure 3 should be included as part of the end-
application matching network, depending upon exact
layout topology.
Slug Layout Techniques
The most important connection to make to the
MAX2601/MAX2602 is the back side. It should connect
directly to the PC board ground plane if it is on the top
side, or through numerous plated through-holes if the
ground plane is buried. For maximum gain, this con-
nection should have very little self-inductance. Since it
is also the thermal path for heat dissipation, it must
have low thermal impedance, and the ground plane
should be large.
4
2.8nH
32
MAX2601
MAX2602
1
2.8nH
2.8nH
ZS
2.8nH
ZL
5678
Figure 3. Optimum Port Impedance
Package Information
For the latest package outline information and land patterns, go
to www.maxim-ic.com/packages.
PACKAGE TYPE PACKAGE CODE DOCUMENT NO.
8 SOIC
S8E-12
21-0041
_______________________________________________________________________________________ 5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MAX2601.PDF ] | |
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