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PDF 7MBR10NE120 Data sheet ( Hoja de datos )

Número de pieza 7MBR10NE120
Descripción IGBT(1200V/10A)
Fabricantes Fuji Electric 
Logotipo Fuji Electric Logotipo



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No Preview Available ! 7MBR10NE120 Hoja de datos, Descripción, Manual

7MBR10NE120
IGBT MODULE
1200V / 10A / PIM
IGBT Modules
Features
· High Speed Switching
· Voltage Drive
· Low Inductance Module Structure
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage
Average forward current
Surge current
Repetitive peak reverse voltage
Non-Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I²t (Non-Repetitive)
Symbol
VCES
VGES
IC
ICP
-IC
PC
VCES
VGES
IC
ICP
PC
VRRM
IF(AV)
IFSM
VRRM
VRSM
IO
IFSM
Operating junction temperature
Storage temperature
Isolation voltage
Mounting screw torque
Tj
Tstg
Viso
*1 Recommendable value : 1.3 to 1.7 N·m (M4)
Condition
Continuous
1ms
1 device
Continuous
1ms
1 device
10ms
50Hz/60Hz sine wave
Tj=150°C, 10ms
Tj=150°C, 10ms
AC : 1 minute
Ra ting
1200
±20
10
20
10
60
1200
±20
5
12.5
40
1200
1
50
1600
1700
25
320
512
+150
-40 to +125
AC 2500
1.7 *1
Unit
V
V
A
A
A
W
V
V
A
A
W
V
A
A
V
V
A
A
A²s
°C
°C
V
N·m

1 page




7MBR10NE120 pdf
IGBT Module
7MBR10NE120
Switching loss vs. Collector current
Vcc=600V, RG=62 ohm, VGE=±15V
4
3
2
1
0
0
30
25
20
15
10
5
0
0
5 10
Collector current : Ic [A]
15
Converter Diode
Forward current vs. Forward voltage
0.5 1.0
Forward voltage : VF [V]
1.5
Capacitance vs. Collector-Emitter voltage
Tj=25°C
10
1
0.1
20 0 5 10 15 20 25 30 35
Collector-Emitter voltage : VCE [V]
2.0

5 Page










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