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M6MGB160S4BVP fiches techniques PDF

Mitsubishi - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP

Numéro de référence M6MGB160S4BVP
Description CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
Fabricant Mitsubishi 
Logo Mitsubishi 





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M6MGB160S4BVP fiche technique
MITSUBISHI LSIs
M6MGB/T160S4BVP
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
DESCRIPTION
FEATURES
The MITSUBISHI M6MGB/T160S4BVP is a Stacked Multi • Access time
Chip Package (S-MCP) that contents 16M-bits flash memory
and 4M-bits Static RAM in a 48-pin TSOP (TYPE-I).
Flash Memory
SRAM
90ns (Max.)
85ns (Max.)
• Supply voltage
Vcc=2.7 ~ 3.6V
16M-bits Flash memory is a 2097152 bytes /1048576 words,
3.3V-only, and high performance non-volatile memory
fabricated by CMOS technology for the peripheral circuit
and DINOR(DIvided bit-line NOR) architecture for the
Ambient temperature
W version
Package : 48-pin TSOP (Type-I)
,
Ta=-20 ~ 85°C
0.4mm lead pitch
memory cell.
4M-bits SRAM is a 524288bytes / 262144words
unsynchronous SRAM fabricated by silicon-gate CMOS
technology.
APPLICATION
Mobile communication products
M6MGB/T160S4BVP is suitable for the application of the
mobile-communication-system to reduce both the mount
space and weight .
A15
A14
A13
A12
A11
A10
A9
A8
A19
S-CE
WE#
F-RP#
F-WP#
S-VCC
F-RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
PIN CONFIGURATION (TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
F-VCC
S-VCC
GND
A-1-A17
A18-A19
DQ0-DQ15
F-CE#
S-CE
OE#
WE#
F-WP#
F-RP#
F-RY/BY#
BYTE#
48 A16
47 BYTE#
46 GND
45 DQ15/A-1
44 DQ7
43 DQ14
42 DQ6
41 DQ13
40 DQ5
39 DQ12
38 DQ4
37 F-VCC
36 DQ11
35 DQ3
34 DQ10
33 DQ2
32 DQ9
31 DQ1
30 DQ8
29 DQ0
28 OE#
27 GND
26 F-CE#
25 A0
14.0 mm
:Vcc for Flash
:Vcc for SRAM
:GND for Flash/SRAM
:Flash/SRAM common Address
:Address for Flash
:Data I/O
:Flash Chip Enable
:SRAM Chip Enable
:Flash/SRAM Output Enable
:Flash/SRAM Write Enable
:Flash Write Protect
:Flash Reset Power Down
:Flash Ready /Busy
:Flash/SRAM Byte Enable
NC:Non Connection
1 Sep. 1999 , Rev.2.0

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