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ST Microelectronics - 4 Mbit 512Kb x8 Low Power SRAM with Output Enable

Numéro de référence M68Z512
Description 4 Mbit 512Kb x8 Low Power SRAM with Output Enable
Fabricant ST Microelectronics 
Logo ST Microelectronics 





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M68Z512 fiche technique
M68Z512
4 Mbit (512Kb x8) Low Power SRAM with Output Enable
s ULTRA LOW DATA RETENTION CURRENT
– 100nA (typical)
– 10µA (max)
s OPERATION VOLTAGE: 5V ±10%
s 512 Kbit x8 SRAM with OUTPUT ENABLE
s EQUAL CYCLE and ACCESS TIMES: 70ns
s LOW VCC DATA RETENTION: 2V
s TRI-STATE COMMON I/O
s CMOS for OPTIMUM SPEED/POWER
s AUTOMATIC POWER-DOWN WHEN
DESELECTED
s INTENDED FOR USE WITH ST
ZEROPOWER® AND TIMEKEEPER®
CONTROLLERS
DESCRIPTION
The M68Z512 is a 4 Mbit (4,194,304 bit) CMOS
SRAM, organized as 524,288 words by 8 bits. The
device features fully static operation requiring no
external clocks or timing strobes, with equal ad-
dress access and cycle times. It requires a single
5V ±10% supply, and all inputs and outputs are
TTL compatible.
This device has an automatic power-down feature,
reducing the power consumption by over 99%
when deselected.
The M68Z512 is available in a 32 lead TSOP II
(10 x 20mm) package.
Table 1. Signal Names
A0-A18
Address Inputs
DQ0-DQ7
Data Input/Output
E Chip Enable
G Output Enable
W Write Enable
VCC Supply Voltage
VSS Ground
32
1
TSOP II 32 (NC)
10 x 20mm
Figure 1. Logic Diagram
VCC
19
A0-A18
8
DQ0-DQ7
W M68Z512
E
G
VSS
AI03030
March 2000
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