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Numéro de référence | M36W832BE | ||
Description | 32 Mbit 2Mb x16 / Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM / Multiple Memory Product | ||
Fabricant | ST Microelectronics | ||
Logo | |||
1 Page
M36W832TE
M36W832BE
32 Mbit (2Mb x16, Boot Block) Flash Memory
and 8 Mbit (512Kb x16) SRAM, Multiple Memory Product
FEATURES SUMMARY
s SUPPLY VOLTAGE
– VDDF = 2.7V to 3.3V
– VDDS = VDDQF = 2.7V to 3.3V
– VPPF = 12V for Fast Program (optional)
s ACCESS TIMES: 70ns and 85ns
s LOW POWER CONSUMPTION
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M36W832TE: 88BAh
– Bottom Device Code, M36W832BE: 88BBh
FLASH MEMORY
s 32 Mbit (2Mb x16) BOOT BLOCK
– 8 x 4 KWord Parameter Blocks (Top or
Bottom Location)
s PROGRAMMING TIME
– 10µs typical
– Double Word Programming Option
– Quadruple Word Programming Option
s BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WPF for Block Lock-Down
s AUTOMATIC STANDBY MODE
s PROGRAM and ERASE SUSPEND
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s COMMON FLASH INTERFACE
s SECURITY
– 128 bit user programmable OTP cells
– 64 bit unique device identifier
Figure 1. Packages
FBGA
Stacked LFBGA66 (ZA)
12 x 8mm
SRAM
s 8 Mbit (512Kb x 16)
s ACCESS TIME: 70ns
s LOW VDDS DATA RETENTION: 1.5V
s POWER DOWN FEATURES USING TWO
CHIP ENABLE INPUTS
May 2003
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Pages | Pages 30 | ||
Télécharger | [ M36W832BE ] |
No | Description détaillée | Fabricant |
M36W832BE | 32 Mbit 2Mb x16 / Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM / Multiple Memory Product | ST Microelectronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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