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Numéro de référence | M36DR432AZA | ||
Description | 32 Mbit 2Mb x16 / Dual Bank / Page Flash Memory and 4 Mbit 256K x16 SRAM / Multiple Memory Product | ||
Fabricant | ST Microelectronics | ||
Logo | |||
M36DR432A
M36DR432B
32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory
and 4 Mbit (256K x16) SRAM, Multiple Memory Product
FEATURES SUMMARY
s SUPPLY VOLTAGE
– VDDF = VDDS =1.65V to 2.2V
– VPPF = 12V for Fast Program (optional)
s ACCESS TIME: 100,120ns
s LOW POWER CONSUMPTION
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M36DR432A: 00A0h
– Bottom Device Code, M36DR432B: 00A1h
FLASH MEMORY
s 32 Mbit (2Mb x16) BOOT BLOCK
– Parameter Blocks (Top or Bottom Location)
s PROGRAMMING TIME
– 10µs typical
– Double Word Programming Option
s ASYNCRONOUS PAGE MODE READ
– Page width: 4 Word
– Page Mode Access Time: 35ns
s DUAL BANK OPERATION
– Read within one Bank while Program or
Erase within the other
– No Delay between Read and Write
Operations
s BLOCK PROTECTION ON ALL BLOCKS
– WPF for Block Locking
s COMMON FLASH INTERFACE
– 64 bit Security Code
SRAM
s 4 Mbit (256K x 16 bit)
s LOW VDDS DATA RETENTION: 1V
s POWER DOWN FEATURES USING TWO
CHIP ENABLE INPUTS
Figure 1. Packages
FBGA
Stacked LFBGA66 (ZA)
8 x 8 ball array
November 2001
1/46
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Pages | Pages 30 | ||
Télécharger | [ M36DR432AZA ] |
No | Description détaillée | Fabricant |
M36DR432AZA | 32 Mbit 2Mb x16 / Dual Bank / Page Flash Memory and 4 Mbit 256K x16 SRAM / Multiple Memory Product | ST Microelectronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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