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M29W641DL12ZA1T fiches techniques PDF

ST Microelectronics - 64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory

Numéro de référence M29W641DL12ZA1T
Description 64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory
Fabricant ST Microelectronics 
Logo ST Microelectronics 





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M29W641DL12ZA1T fiche technique
M29W641DH, M29W641DL
M29W641DU
64 Mbit (4Mb x16, Uniform Block)
3V Supply Flash Memory
PRODUCT PREVIEW
FEATURES SUMMARY
s SUPPLY VOLTAGE
– VCC = 2.7V to 3.6V Core Power Supply
– VCCQ = 1.8V to 3.6V for Input/Output
– VPP =12 V for Fast Program (optional)
s ACCESS TIME: 70, 90, 100 and 120ns
s PROGRAMMING TIME
– 10 µs typical
– Double Word Program option
s 128 UNIFORM, 32-KWord MEMORY BLOCKS
s PROGRAM/ERASE CONTROLLER
– Embedded Program and Erase algorithms
s ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
s UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s WRITE PROTECT OPTIONS
– M29W641DH: WP Pin for Write Protection of
Highest Address Block
– M29W641DL: WP Pin for Write Protection of
Lowest Address Block
– M29W641DU: No Write Protection
s TEMPORARY BLOCK UNPROTECTION
MODE
s COMMON FLASH INTERFACE
s EXTENDED MEMORY BLOCK
– Extra block used as security block or to store
additional information
s LOW POWER CONSUMPTION
– Standby and Automatic Standby
s ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code M29W641D: 22C7h
Figure 1. Packages
TSOP48 (N)
12 x 20mm
FBGA
TFBGA63 (ZA)
7 x 11mm
April 2003
This is preliminary information on a new product now in development. Details are subject to change without notice.
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