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M29W640DB90ZA1T fiches techniques PDF

ST Microelectronics - 64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory

Numéro de référence M29W640DB90ZA1T
Description 64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory
Fabricant ST Microelectronics 
Logo ST Microelectronics 





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M29W640DB90ZA1T fiche technique
M29W640DT
M29W640DB
64 Mbit (8Mb x8 or 4Mb x16, Boot Block)
3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY
s SUPPLY VOLTAGE
– VCC = 2.7V to 3.6V for Program, Erase, Read
– VPP =12 V for Fast Program (optional)
s ACCESS TIME: 70, 90 ns
s PROGRAMMING TIME
– 10 µs per Byte/Word typical
– Double Word Programming Option
s 135 MEMORY BLOCKS
– 1 Boot Block and 7 Parameter Blocks,
8 KBytes each (Top or Bottom Location)
– 127 Main Blocks, 64 KBytes each
s PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithms
s ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
s UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s VPP/WP Pin for FAST PROGRAM and WRITE
PROTECT
s TEMPORARY BLOCK UNPROTECTION
MODE
s COMMON FLASH INTERFACE
– 64-bit Security Code
s EXTENDED MEMORY BLOCK
– Extra block used as security block or to store
additional information
s LOW POWER CONSUMPTION
– Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W640DT: 22DEh
– Bottom Device Code M29W640DB: 22DFh
Figure 1. Packages
TSOP48 (N)
12 x 20mm
FBGA
TFBGA63 (ZA)
63 ball array
April 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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