M29W400T-120ZA1R Datasheet PDF - ST Microelectronics
| Part Number | M29W400T-120ZA1R | |
| Description | 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory | |
| Manufacturers | ST Microelectronics | |
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M29W400T
M29W400B
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)
Low Voltage Single Supply Flash Memory
M29W400T and M29W400B are replaced
respectively by the M29W400BT and
M29W400BB
2.7V to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
FAST ACCESS TIME: 90ns
FAST PROGRAMMING TIME
– 10µs by Byte / 16µs by Word typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte or Word-by-Word
– Status Register bits and Ready/Busy Output
MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code, M29W400T: 00EEh
– Device Code, M29W400B: 00EFh
DESCRIPTION
The M29W400 is a non-volatile memory that may
be erased electrically at the block or chip level and
programmed in-system on a Byte-by-Byteor Word-
by-Word basis using only a single 2.7V to 3.6V VCC
supply. For Program and Erase operations the
necessary high voltages are generated internally.
The device can also be programmed in standard
programmers.
The array matrix organisation allows each block to
be erased and reprogrammed without affecting
other blocks. Blocks can be protected against pro-
graming and erase on programming equipment,
NOT FOR NEW DESIGN
44
TSOP48 (N)
12 x 20 mm
1
SO44 (M)
BGA
FBGA48 (ZA)
8 x 6 solder balls
Figure 1. Logic Diagram
VCC
18
A0-A17
15
DQ0-DQ14
W DQ15A–1
M29W400T
E M29W400B BYTE
G RB
RP
VSS
AI02065
November 1999
This is information on a product still in productionbut not recommended for new designs.
1/34
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M29W400T, M29W400B
Table 3A. M29W400T Block Address Table
Address Range (x8) Address Range (x16) A17 A16 A15 A14 A13 A12
00000h-0FFFFh
00000h-07FFFh 0 0 0 X X X
10000h-1FFFFh
08000h-0FFFFh
0 0 1 XXX
20000h-2FFFFh
10000h-17FFFh 0 1 0 X X X
30000h-3FFFFh
18000h-1FFFFh
0 1 1 XXX
40000h-4FFFFh
20000h-27FFFh 1 0 0 X X X
50000h-5FFFFh
28000h-2FFFFh
1 0 1 XXX
60000h-6FFFFh
30000h-37FFFh 1 1 0 X X X
70000h-77FFFh 38000h-3BFFFh 1 1 1 0 X X
78000h-79FFFh 3C000h-3CFFFh 1 1 1 1 0 0
7A000h-7BFFFh 3D000h-3DFFFh 1 1 1 1 0 1
7C000h-7FFFFh 3E000h-3FFFFh 1 1 1 1 1 X
Table 3B. M29W400B Block Address Table
Address Range (x8) Address Range (x16) A17 A16 A15 A14 A13 A12
00000h-03FFFh
00000h-01FFFh 0 0 0 0 0 X
04000h-05FFFh
02000h-02FFFh 0 0 0 0 1 0
06000h-07FFFh
03000h-03FFFh 0 0 0 0 1 1
08000h-0FFFFh
04000h-07FFFh 0 0 0 1 X X
10000h-1FFFFh
08000h-0FFFFh
0 0 1 XXX
20000h-2FFFFh
10000h-17FFFh 0 1 0 X X X
30000h-3FFFFh
18000h-1FFFFh
0 1 1 XXX
40000h-4FFFFh
20000h-27FFFh 1 0 0 X X X
50000h-5FFFFh
28000h-2FFFFh
1 0 1 XXX
60000h-6FFFFh
30000h-37FFFh 1 1 0 X X X
70000h-7FFFFh
38000h-3FFFFh
1 1 1 XXX
Bus Operations
The following operations can be performed using
the appropriate bus cycles: Read (Array, Electronic
Signature, Block Protection Status), Write com-
mand, Output Disable, Standby, Reset, Block Pro-
tection, Unprotection, Protection Verify, Unprotec-
tion Verify and Block Temporary Unprotection. See
Tables 4 and 5.
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