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Numéro de référence | M29W400DT70N6T | ||
Description | 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory | ||
Fabricant | ST Microelectronics | ||
Logo | |||
M29W400DT
M29W400DB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)
3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY
s SUPPLY VOLTAGE
– VCC = 2.7V to 3.6V for Program, Erase and
Read
s ACCESS TIME: 45, 55, 70ns
s PROGRAMMING TIME
– 10µs per Byte/Word typical
s 11 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 8 Main Blocks
s PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithms
s ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
s UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s TEMPORARY BLOCK UNPROTECTION
MODE
s LOW POWER CONSUMPTION
– Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W400DT: 00EEh
– Bottom Device Code M29W400DB: 00EFh
Figure 1. Packages
SO44 (M)
TSOP48 (N)
12 x 20mm
FBGA
TFBGA48 (ZA)
6 x 9mm
February 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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Pages | Pages 36 | ||
Télécharger | [ M29W400DT70N6T ] |
No | Description détaillée | Fabricant |
M29W400DT70N6E | 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory | ST Microelectronics |
M29W400DT70N6F | 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory | ST Microelectronics |
M29W400DT70N6T | 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory | ST Microelectronics |
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