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IRFU410B fiches techniques PDF

Fairchild - 500V N-Channel MOSFET

Numéro de référence IRFU410B
Description 500V N-Channel MOSFET
Fabricant Fairchild 
Logo Fairchild 





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IRFU410B fiche technique
November 2001
IRFR410B / IRFU410B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
Features
• 0.9A, 500V, RDS(on) = 10@VGS = 10 V
• Low gate charge ( typical 5.1 nC)
• Low Crss ( typical 3.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
D
!
GS
D-PAK
IRFR Series
GDS
I-PAK
IRFU Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, Tstg
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
G!
◀▲
!
S
IRFR410B / IRFU410B
500
0.9
0.57
3.0
± 30
40
0.9
2.0
5.5
2.5
20
0.16
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
Typ Max Units
-- 6.25 °C/W
-- 50 °C/W
-- 110 °C/W
Rev. B1, November 2001

PagesPages 9
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