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ST Microelectronics - 4 Mbit (512 Kbit x 8) ZEROPOWER SRAM

Numéro de référence M48Z512A
Description 4 Mbit (512 Kbit x 8) ZEROPOWER SRAM
Fabricant ST Microelectronics 
Logo ST Microelectronics 





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M48Z512A fiche technique
M48Z512A
M48Z512AY, M48Z512AV
4 Mbit (512 Kbit x 8) ZEROPOWER® SRAM
Not recommended for new design
Features
Integrated, ultra low power SRAM, power-fail
control circuit, and battery
Conventional SRAM operation; unlimited
)WRITE cycles
t(s10 years of data retention in the absence of
cpower
duAutomatic power-fail chip deselect and WRITE
roprotection
PTwo WRITE protect voltages:
te(VPFD = power-fail deselect voltage)
le– M48Z512A: VCC = 4.75 to 5.5 V;
4.5 V VPFD 4.75 V
so– M48Z512AY: VCC = 4.5 to 5.5 V;
b4.2 V VPFD 4.5 V
O– M48Z512AV: VCC = 3.0 to 3.6 V;
-2.8 V VPFD 3.0 V
t(s)Battery internally isolated until power is applied
cPin and function compatible with JEDEC
ustandard 512 K x 8 SRAMs
rodPMDIP32 is an ECOPACK® package
RoHS compliant
Obsolete P– Lead-free second level interconnect
32
1
PMDIP32 module
Description
The M48Z512A/Y/V ZEROPOWER® RAM is a
non-volatile, 4,194,304-bit static RAM organized
as 524,288 words by 8 bits. The devices combine
an internal lithium battery, a CMOS SRAM and a
control circuit in a plastic, 32-pin DIP module.
June 2011
Doc ID 5146 Rev 9
This is information on a product still in production but not recommended for new designs.
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M48Z512A 4 Mbit (512 Kbit x 8) ZEROPOWER SRAM ST Microelectronics
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M48Z512AV 4 Mbit (512 Kbit x 8) ZEROPOWER SRAM STMicroelectronics
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M48Z512AY 4 Mbit (512 Kbit x 8) ZEROPOWER SRAM ST Microelectronics
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